Authors: Trommer, K Herzog, U Schulze, N Roewer, G

Citation: K. Trommer et al., Disproportionation of chlorodisilanes containing vinyl, diethylamino or phenyl substituents, MAIN GR MET, 24(7), 2001, pp. 425-433

Authors: Rohmfeld, S Hundhausen, M Ley, L Schulze, N Pensl, G

Citation: S. Rohmfeld et al., Isotope-disorder-induced line broadening of phonons in the raman spectra of SiC, PHYS REV L, 86(5), 2001, pp. 826-829

Authors: Schulze, N

Citation: N. Schulze, Culture tool for school (Chicago's museums), MUSEUM NEWS, 80(5), 2001, pp. 10-11

Authors: Schulze, N Barrett, D Pensl, G

Citation: N. Schulze et al., Controlled growth of 15R-SiC single crystals by the modified Lely method, PHYS ST S-A, 178(2), 2000, pp. 645-650

Authors: Schulze, N Barrett, DL Pensl, G Rohmfeld, S Hundhausen, M

Citation: N. Schulze et al., Near-thermal equilibrium growth of SiC by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 44-47

Authors: Herzog, U Schulze, N Trommer, K Roewer, G

Citation: U. Herzog et al., Modification of the base-catalysed disproportionation of methylchlorodisilanes, MAIN GR MET, 22(1), 1999, pp. 19-33