AAAAAA

   
Results: 1-8 |
Results: 8

Authors: Zeitler, U Schumacher, HW Haug, RJ Jansen, AGM
Citation: U. Zeitler et al., Transport anisotropies in a Si/SiGe heterostructure induced by an in-planemagnetic field, PHYSICA B, 298(1-4), 2001, pp. 501-504

Authors: Keyser, UF Schumacher, HW Zeitler, U Haug, RJ Eberl, K
Citation: Uf. Keyser et al., Fabrication of quantum dots with scanning probe nanolithography, PHYS ST S-B, 224(3), 2001, pp. 681-684

Authors: Zeitler, U Schumacher, HW Jansen, AGM Haug, RJ
Citation: U. Zeitler et al., Magnetoresistance anisotropy in Si/SiGe in tilted magnetic fields: Experimental evidence for a stripe-phase formation, PHYS REV L, 86(5), 2001, pp. 866-869

Authors: Schumacher, HW Ravelosona, D Cayssol, F Wunderlich, J Chappert, C Mathet, V Thiaville, A Jamet, JP Ferre, J Haug, RJ
Citation: Hw. Schumacher et al., Propagation of a magnetic domain wall in the presence of AFM fabricated defects, IEEE MAGNET, 37(4), 2001, pp. 2331-2333

Authors: Keyser, UF Schumacher, HW Zeitler, U Haug, RJ Eberl, K
Citation: Uf. Keyser et al., Fabrication of a single-electron transistor by current-controlled local oxidation of a two-dimensional electron system, APPL PHYS L, 76(4), 2000, pp. 457-459

Authors: Hapke-Wurst, I Zeitler, U Schumacher, HW Haug, RJ Pierz, K Ahlers, FJ
Citation: I. Hapke-wurst et al., Size determination of InAs quantum dots using magneto-tunnelling experiments, SEMIC SCI T, 14(11), 1999, pp. L41-L43

Authors: Schumacher, HW Keyser, UF Zeitler, U Haug, RJ Eberl, K
Citation: Hw. Schumacher et al., Nanomachining of mesoscopic electronic devices using an atomic force microscope, APPL PHYS L, 75(8), 1999, pp. 1107-1109

Authors: Schumacher, HW Nauen, A Zeitler, U Haug, RJ Weitz, P Jansen, AGM Schaffler, F
Citation: Hw. Schumacher et al., Anomalous coincidences between valley split Landau levels in a Si/SiGe heterostructure, PHYSICA B, 258, 1998, pp. 260-263
Risultati: 1-8 |