Authors: Vispute, RD Patel, A Baynes, K Ming, B Sharma, RP Venkatesan, T Scozzie, CJ Lelis, A Zheleva, T Jones, KA

Citation: Rd. Vispute et al., Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices, MRS I J N S, 5, 2000, pp. NIL_509-NIL_514

Authors: Scozzie, CJ Lelis, AJ McLean, FB Vispute, RD Choopun, S Patel, A Sharma, RP Venkatesan, T

Citation: Cj. Scozzie et al., Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C, J APPL PHYS, 86(7), 1999, pp. 4052-4054