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Results:
1-9
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Results: 9
Authors:
Seghier, D
Gudmundsson, JT
Gislason, HP
Citation: D. Seghier et al., Direct observation of hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSxSe1-x grown by MBE, J CRYST GR, 214, 2000, pp. 478-481
Authors:
Morhain, C
Seghier, D
Vogele, B
O'Donnell, C
Prior, KA
Cavenett, BC
Gislason, HP
Citation: C. Morhain et al., Properties of the nitrogen acceptor in Zn1-xMgxSe alloys with varying Mg concentration, J CRYST GR, 214, 2000, pp. 482-486
Authors:
Seghier, D
Gislason, HP
Citation: D. Seghier et Hp. Gislason, Investigation of persistent photoconductivity in nitrogen-doped ZnSe/GaAs heterojunctions grown by MBE, J CRYST GR, 214, 2000, pp. 511-515
Authors:
Seghier, D
Gislason, HP
Citation: D. Seghier et Hp. Gislason, Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN : Mg, J APPL PHYS, 88(11), 2000, pp. 6483-6487
Authors:
Seghier, D
Gislason, HP
Citation: D. Seghier et Hp. Gislason, Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN : Mg, PHYSICA B, 274, 1999, pp. 46-49
Authors:
Seghier, D
Gislason, HP
Citation: D. Seghier et Hp. Gislason, The role of deep levels in the persistent photoconductivity in Mg-doped GaN grown by MOCVD, PHYSICA B, 274, 1999, pp. 63-65
Authors:
Seghier, D
Gudmundsson, JT
Gislason, HP
Citation: D. Seghier et al., Hydrogen passivation of nitrogen-related energy levels in ZnSe and ZnSSe grown by MBE, PHYSICA B, 274, 1999, pp. 891-894
Authors:
Seghier, D
Gislason, HP
Citation: D. Seghier et Hp. Gislason, The observation of persistent photoconductivity in N-doped p-type ZnSe/GaAs heterojunctions, J PHYS D, 32(4), 1999, pp. 369-373
Authors:
Seghier, D
Hauksson, IS
Gislason, HP
Prior, JA
Cavenett, BC
Citation: D. Seghier et al., Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterojunctions, J APPL PHYS, 85(7), 1999, pp. 3721-3725
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