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Results:
1-7
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Results: 7
Authors:
Fehr, JN
Dupertuis, MA
Hessler, TP
Kappei, L
Marti, D
Selbmann, PE
Deveaud, B
Pleumeekers, JL
Emery, JY
Dagens, B
Citation: Jn. Fehr et al., Direct observation of longitudinal spatial hole burning in semiconductor optical amplifiers with injection, APPL PHYS L, 78(26), 2001, pp. 4079-4081
Authors:
Dupertuis, MA
Pleumeekers, JL
Hessler, TP
Selbmann, PE
Deveaud, B
Dagens, B
Emery, JY
Citation: Ma. Dupertuis et al., Extremely fast high-gain and low-current SOA by optical speed-up at transparency, IEEE PHOTON, 12(11), 2000, pp. 1453-1455
Authors:
Ciuti, C
Piermarocchi, C
Savona, V
Selbmann, PE
Schwendimann, P
Quattropani, A
Citation: C. Ciuti et al., Strongly driven exciton resonances in quantum wells: Light-induced dressing versus Coulomb scattering, PHYS REV L, 84(8), 2000, pp. 1752-1755
Authors:
Ciuti, C
Piermarocchi, C
Savona, V
Selbmann, PE
Schwendimann, P
Quattropani, A
Citation: C. Ciuti et al., Coherence versus Coulomb scattering in resonantly excited quantum wells, PHYS ST S-A, 178(1), 2000, pp. 417-422
Authors:
Hartig, M
Ganiere, JD
Selbmann, PE
Deveaud, B
Rota, L
Citation: M. Hartig et al., Density dependence of carrier-carrier-induced intersubband scattering in GaAs/AlxGa1-xAs quantum wells, PHYS REV B, 60(3), 1999, pp. 1500-1503
Authors:
Selbmann, PE
Hessler, TP
Pleumeekers, JL
Dupertuis, MA
Deveaud, B
Dagens, B
Emery, JY
Citation: Pe. Selbmann et al., Observation of dark-pulse formation in gain-clamped semiconductor optical amplifiers by cross-gain modulation, APPL PHYS L, 75(24), 1999, pp. 3760-3762
Authors:
Gurioli, M
Borri, P
Colocci, M
Gulia, M
Rossi, F
Molinari, E
Selbmann, PE
Lugli, P
Citation: M. Gurioli et al., Exciton formation and relaxation in GaAs epilayers, PHYS REV B, 58(20), 1998, pp. R13403-R13406
Risultati:
1-7
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