Authors:
Dubecky, F
Darmo, J
Krempasky, M
Sekacova, M
Zat'ko, B
Necas, V
Pelfer, PG
Senderak, R
Somora, M
Haralabidis, N
Loukas, D
Misiakos, K
Hlavac, S
Kolesar, F
Bohacek, P
Rucek, M
Citation: F. Dubecky et al., On technology and performance of SAMO: X- and gamma-ray 32-pixel line detector based on semi-insulating GaAs and InP, NUCL INST A, 458(1-2), 2001, pp. 152-157
Authors:
Pincik, E
Jergel, M
Kucera, M
van Swaaij, RACMM
Ivanco, J
Senderak, R
Zeman, M
Mullerova, J
Brunel, M
Citation: E. Pincik et al., Influence of the plasma pretreatment of GaAs(100) and Si(100) surfaces on the optical and structural properties of Si3N4/GaAs and a-SiGe/Si interfaces, APPL SURF S, 166(1-4), 2000, pp. 72-76
Authors:
Luby, S
Majkova, E
Jergel, M
Senderak, R
D'Anna, E
Leggieri, G
Luches, A
Martino, M
Citation: S. Luby et al., Structure and in-depth concentrations in excimer laser irradiated Pb-Co codeposited films, THIN SOL FI, 359(2), 2000, pp. 141-145
Authors:
Ivanco, J
Dubecky, F
Darmo, J
Krempasky, M
Besse, I
Senderak, R
Citation: J. Ivanco et al., Semi-insulating GaAs-based Schottky contacts in the role of detectors of ionising radiation: An effect of the interface treatment, NUCL INST A, 434(1), 1999, pp. 158-163
Authors:
Jergel, M
Mikulik, P
Majkova, E
Luby, S
Senderak, R
Pincik, E
Brunel, M
Hudek, P
Kostic, I
Konecnikova, A
Citation: M. Jergel et al., Structural characterization of lamellar multilayer gratings by x-ray reflectivity and scanning electron microscopy, J PHYS D, 32(10A), 1999, pp. A220-A223