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Authors: Harada, S Suzuki, S Senzaki, J Kosugi, R Adachi, K Fukuda, K Arai, K

Citation: S. Harada et al., High channel mobility in normally-off 4H-SiC buried channel MOSFETs, IEEE ELEC D, 22(6), 2001, pp. 272-274

Authors: Senzaki, J Fukuda, K Imai, S Tanaka, Y Kobayashi, N Tanoue, H Okushi, H Arai, K

Citation: J. Senzaki et al., The post-annealing temperature dependences of electrical properties and surface morphologies for arsenic ion-implanted 4H-SiC at high temperature, APPL SURF S, 159, 2000, pp. 544-549

Authors: Fukuda, K Cho, WJ Arai, K Suzuki, S Senzaki, J Tanaka, T

Citation: K. Fukuda et al., Effect of oxidation method and post-oxidation annealing on interface properties of metal-oxide-semiconductor structures formed on n-type 4H-SiC C(000(1)over-bar) face, APPL PHYS L, 77(6), 2000, pp. 866-868

Authors: Cho, W Kosugi, R Senzaki, J Fukuda, K Arai, K Suzuki, S

Citation: W. Cho et al., Study on electron trapping and interface states of various gate dielectricmaterials in 4H-SiC metal-oxide-semiconductor capacitors, APPL PHYS L, 77(13), 2000, pp. 2054-2056