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Results: 1-14 |
Results: 14
Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy
Authors: Hsu, JWP Lang, DV Richter, S Kleiman, RN Sergent, AM Look, DC Molnar, RJ
Citation: Jwp. Hsu et al., Impurity band in the interfacial region of GaN films grown by hydride vapor phase epitaxy, J ELEC MAT, 30(3), 2001, pp. 115-122
Continuous wave operation of gimel similar to 19 mu m surface-plasmon quantum cascade lasers
Authors: Colombelli, R Tredicucci, A Gmachl, C Capasso, F Sivco, DL Sergent, AM Hutchinson, AL Cho, AY
Citation: R. Colombelli et al., Continuous wave operation of gimel similar to 19 mu m surface-plasmon quantum cascade lasers, ELECTR LETT, 37(16), 2001, pp. 1023-1024
Far-infrared surface-plasmon quantum-cascade lasers at 21.5 mu m and 24 mum wavelengths
Authors: Colombelli, R Capasso, F Gmachl, C Hutchinson, AL Sivco, DL Tredicucci, A Wanke, MC Sergent, AM Cho, AY
Citation: R. Colombelli et al., Far-infrared surface-plasmon quantum-cascade lasers at 21.5 mu m and 24 mum wavelengths, APPL PHYS L, 78(18), 2001, pp. 2620-2622
Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence
Authors: Spagnolo, V Troccoli, M Scamarcio, G Gmachl, C Capasso, F Tredicucci, A Sergent, AM Hutchinson, AL Sivco, DL Cho, AY
Citation: V. Spagnolo et al., Temperature profile of GaInAs/AlInAs/InP quantum cascade-laser facets measured by microprobe photoluminescence, APPL PHYS L, 78(15), 2001, pp. 2095-2097
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes
Authors: Hsu, JWP Manfra, MJ Lang, DV Richter, S Chu, SNG Sergent, AM Kleiman, RN Pfeiffer, LN Molnar, RJ
Citation: Jwp. Hsu et al., Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottkydiodes, APPL PHYS L, 78(12), 2001, pp. 1685-1687
Defect dominated charge transport in amorphous Ta2O5 thin films
Authors: Fleming, RM Lang, DV Jones, CDW Steigerwald, ML Murphy, DW Alers, GB Wong, YH van Dover, RB Kwo, JR Sergent, AM
Citation: Rm. Fleming et al., Defect dominated charge transport in amorphous Ta2O5 thin films, J APPL PHYS, 88(2), 2000, pp. 850-862
High temperature (T >= 425K) pulsed operation of quantum cascade lasers
Authors: Gmachl, C Tredicucci, A Capasso, F Hutchinson, AL Sivco, DL Sergent, AM Mentzel, T Cho, AY
Citation: C. Gmachl et al., High temperature (T >= 425K) pulsed operation of quantum cascade lasers, ELECTR LETT, 36(8), 2000, pp. 723-725
Intersubband electroluminescence from long-side-cleaved quantum-cascade lasers above threshold: Investigation of phonon bottleneck effects
Authors: Colombelli, R Capasso, F Gmachl, C Tredicucci, A Sergent, AM Hutchinson, AL Sivco, DL Cho, AY
Citation: R. Colombelli et al., Intersubband electroluminescence from long-side-cleaved quantum-cascade lasers above threshold: Investigation of phonon bottleneck effects, APPL PHYS L, 77(24), 2000, pp. 3893-3895
Nature of the highly conducting interfacial layer in GaN films
Authors: Hsu, JWP Lang, DV Richter, S Kleiman, RN Sergent, AM Molnar, RJ
Citation: Jwp. Hsu et al., Nature of the highly conducting interfacial layer in GaN films, APPL PHYS L, 77(18), 2000, pp. 2873-2875
High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon
Authors: Kwo, J Hong, M Kortan, AR Queeney, KT Chabal, YJ Mannaerts, JP Boone, T Krajewski, JJ Sergent, AM Rosamilia, JM
Citation: J. Kwo et al., High epsilon gate dielectrics Gd2O3 and Y2O3 for silicon, APPL PHYS L, 77(1), 2000, pp. 130-132
Passivation of GaAs using gallium-gadolinium oxides
Authors: Kwo, J Murphy, DW Hong, M Mannaerts, JP Opila, RL Masaitis, RL Sergent, AM
Citation: J. Kwo et al., Passivation of GaAs using gallium-gadolinium oxides, J VAC SCI B, 17(3), 1999, pp. 1294-1296
Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking
Authors: Gmachl, C Sergent, AM Tredicucci, A Capasso, F Hutchinson, AL Sivco, DL Baillargeon, JN Chu, SNG Cho, AY
Citation: C. Gmachl et al., Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking, IEEE PHOTON, 11(11), 1999, pp. 1369-1371
Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation
Authors: Hong, M Kwo, J Kortan, AR Mannaerts, JP Sergent, AM
Citation: M. Hong et al., Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation, SCIENCE, 283(5409), 1999, pp. 1897-1900
Passivation of GaAs using (Ga2O3)(1-x)(Gd2O3)(x), 0 <= x <= 1.0 films
Authors: Kwo, J Murphy, DW Hong, M Opila, RL Mannaerts, JP Sergent, AM Masaitis, RL
Citation: J. Kwo et al., Passivation of GaAs using (Ga2O3)(1-x)(Gd2O3)(x), 0 <= x <= 1.0 films, APPL PHYS L, 75(8), 1999, pp. 1116-1118
Risultati: 1-14 |