ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. I. Flat sample

Authors: Servidori, M Cembali, F Milita, S

Citation: M. Servidori et al., 3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. I. Flat sample, APPL PHYS A, 73(1), 2001, pp. 75-82

3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II.Curved sample

Authors: Servidori, M Cembali, F Milita, S

Citation: M. Servidori et al., 3D DuMond diagrams of multi-crystal Bragg-case synchrotron topography. II.Curved sample, APPL PHYS A, 73(1), 2001, pp. 83-90

Influence of the electrolyte viscosity on the structural features of porous silicon

Authors: Servidori, M Ferrero, C Lequien, S Milita, S Parisini, A Romestain, R Sama, S Setzu, S Thiaudiere, D

Citation: M. Servidori et al., Influence of the electrolyte viscosity on the structural features of porous silicon, SOL ST COMM, 118(2), 2001, pp. 85-90

Porous silicon characterization by x-ray reflectivity: problems arising from using a vacuum environment with synchrotron beam

Authors: Sama, S Ferrero, C Lequien, S Milita, S Romestain, R Servidori, M Setzu, S Thiaudiere, D

Citation: S. Sama et al., Porous silicon characterization by x-ray reflectivity: problems arising from using a vacuum environment with synchrotron beam, J PHYS D, 34(6), 2001, pp. 841-845

A Bragg silicon lattice comparator

Authors: Alasia, F Basile, G Becker, P Kuetgens, U Stuempel, J Servidori, M Hartwig, J

Citation: F. Alasia et al., A Bragg silicon lattice comparator, IEEE INSTR, 50(2), 2001, pp. 608-611

Investigation of Czochralski silicon grown with different interstitial oxygen concentrations and point defect populations

Authors: Sama, S Porrini, M Fogale, F Servidori, M

Citation: S. Sama et al., Investigation of Czochralski silicon grown with different interstitial oxygen concentrations and point defect populations, J ELCHEM SO, 148(9), 2001, pp. G517-G523

X-ray synchrotron topography investigation of porous silicon formed by patterning in localized areas

Authors: Milita, S Maccagnani, P Angelucci, R Servidori, M

Citation: S. Milita et al., X-ray synchrotron topography investigation of porous silicon formed by patterning in localized areas, J ELCHEM SO, 148(8), 2001, pp. G439-G446

X-ray diffraction study of confined porous silicon membranes

Authors: Milita, S Servidori, M Maccagnani, P Cembali, F Pozzi, P Dori, L

Citation: S. Milita et al., X-ray diffraction study of confined porous silicon membranes, J ELCHEM SO, 148(8), 2001, pp. G447-G451

Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing

Authors: Solmi, S Mancini, L Milita, S Servidori, M Mannino, G Bersani, M

Citation: S. Solmi et al., Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing, APPL PHYS L, 79(8), 2001, pp. 1103-1105

Damage profiles in high-energy As implanted Si

Authors: Lulli, G Bianconi, M Parisini, A Sama, S Servidori, M

Citation: G. Lulli et al., Damage profiles in high-energy As implanted Si, J APPL PHYS, 88(7), 2000, pp. 3993-3999

Helium-implanted silicon: A study of bubble precursors

Authors: Corni, F Calzolari, G Frabboni, S Nobili, C Ottaviani, G Tonini, R Cerofolini, GF Leone, D Servidori, M Brusa, RS Karwasz, GP Tiengo, N Zecca, A

Citation: F. Corni et al., Helium-implanted silicon: A study of bubble precursors, J APPL PHYS, 85(3), 1999, pp. 1401-1408

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