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Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates
Authors: Galiev, GB Mokerov, VG Saraikin, VV Slepnev, YV Shagimuratov, GI Imamov, RM Pashaev, EM
Citation: Gb. Galiev et al., Study of the structural perfection and distribution/redistribution of silicon in epitaxial GaAs films grown by molecular beam epitaxy on (100), (111)A, and (111)B substrates, TECH PHYS, 46(4), 2001, pp. 411-416
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