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Results:
1-9
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Results: 9
Authors:
Shahedipour, F
Wessels, BW
Citation: F. Shahedipour et Bw. Wessels, The origin of the 2.8 eV blue emission in p-type GaN : Mg : A time-resolved photoluminescence investigation, MRS I J N S, 6(12), 2001, pp. 1-5
Authors:
Sandvik, P
Mi, K
Shahedipour, F
McClintock, R
Yasan, A
Kung, P
Razeghi, M
Citation: P. Sandvik et al., AlxGa1-xN for solar-blind UV detectors, J CRYST GR, 231(3), 2001, pp. 366-370
Authors:
Guha, S
Keller, RC
Yang, V
Shahedipour, F
Wessels, BW
Citation: S. Guha et al., Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing, APPL PHYS L, 78(1), 2001, pp. 58-60
Authors:
Razeghi, M
Sandvik, P
Kung, P
Walker, D
Mi, K
Zhang, X
Kumar, V
Diaz, J
Shahedipour, F
Citation: M. Razeghi et al., Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates forultraviolet photodetector applications, MAT SCI E B, 74(1-3), 2000, pp. 107-112
Authors:
Shahedipour, F
Conner, BP
White, HW
Citation: F. Shahedipour et al., Optical properties of plasma species absorbed during diamond deposition onsteel, J APPL PHYS, 88(5), 2000, pp. 3039-3046
Authors:
Reshchikov, MA
Shahedipour, F
Korotkov, RY
Wessels, BW
Ulmer, MP
Citation: Ma. Reshchikov et al., Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers, J APPL PHYS, 87(7), 2000, pp. 3351-3354
Authors:
Ves, S
Venkateswaran, UD
Loa, I
Syassen, K
Shahedipour, F
Wessels, BW
Citation: S. Ves et al., Pressure dependence of the blue luminescence in Mg-doped GaN, APPL PHYS L, 77(16), 2000, pp. 2536-2538
Authors:
Shahedipour, F
Wessels, BW
Citation: F. Shahedipour et Bw. Wessels, Investigation of the formation of the 2.8 eV luminescence band in p-type GaN : Mg, APPL PHYS L, 76(21), 2000, pp. 3011-3013
Authors:
Reshchikov, MA
Shahedipour, F
Korotkov, RY
Ulmer, MP
Wessels, BW
Citation: Ma. Reshchikov et al., Deep acceptors in undoped GaN, PHYSICA B, 274, 1999, pp. 105-108
Risultati:
1-9
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