Authors: Voldman, S Hui, D Warriner, L Young, D Howard, J Assaderaghi, F Shahidi, G

Citation: S. Voldman et al., Electrostatic discharge (ESD) protection in silicon-on-insulator (SOI) CMOS technology with aluminum and copper interconnects in advanced microprocessor semiconductor chips, J ELECTROST, 49(3-4), 2000, pp. 151-168