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Results: 1-20 |
Results: 20
Band anticrossing in III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Xin, HP Tu, CW
Citation: W. Shan et al., Band anticrossing in III-N-V alloys, PHYS ST S-B, 223(1), 2001, pp. 75-85
Fabrication of hierarchically structured zeolites through layer-by-layer assembly of zeolite nanocrystals on diatom templates
Authors: Wang, YJ Tang, Y Wang, XD Dong, AG Shan, W Gao, Z
Citation: Yj. Wang et al., Fabrication of hierarchically structured zeolites through layer-by-layer assembly of zeolite nanocrystals on diatom templates, CHEM LETT, (11), 2001, pp. 1118-1119
Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320
Authors: Wu, J Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Xin, HP Tu, CW
Citation: J. Wu et al., Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells - art. no. 085320, PHYS REV B, 6408(8), 2001, pp. 5320
Formation of diluted III-V nitride thin films by N ion implantation
Authors: Yu, KM Walukiewicz, W Wu, J Beeman, JW Ager, JW Haller, EE Shan, W Xin, HP Tu, CW Ridgway, MC
Citation: Km. Yu et al., Formation of diluted III-V nitride thin films by N ion implantation, J APPL PHYS, 90(5), 2001, pp. 2227-2234
Synthesis of InNxP1-x thin films by N ion implantation
Authors: Yu, KM Walukiewicz, W Wu, J Beeman, JW Ager, JW Haller, EE Shan, W Xin, HP Tu, CW
Citation: Km. Yu et al., Synthesis of InNxP1-x thin films by N ion implantation, APPL PHYS L, 78(8), 2001, pp. 1077-1079
The IT workforce in China
Authors: Shan, W
Citation: W. Shan, The IT workforce in China, COMM ACM, 44(7), 2001, pp. 76-76
Increasing numbers of synaptic puncta during late-phase LTP: N-cadherin issynthesized, recruited to synaptic sites, and required for potentiation
Authors: Bozdagi, O Shan, W Tanaka, H Benson, DL Huntley, GW
Citation: O. Bozdagi et al., Increasing numbers of synaptic puncta during late-phase LTP: N-cadherin issynthesized, recruited to synaptic sites, and required for potentiation, NEURON, 28(1), 2000, pp. 245-259
Effect of nitrogen on the electronic band structure of group III-N-V alloys
Authors: Shan, W Walukiewicz, W Yu, KM Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR Nauka, C
Citation: W. Shan et al., Effect of nitrogen on the electronic band structure of group III-N-V alloys, PHYS REV B, 62(7), 2000, pp. 4211-4214
Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys
Authors: Yu, KM Walukiewicz, W Shan, W Ager, JW Wu, J Haller, EE Geisz, JF Friedman, DJ Olson, JM
Citation: Km. Yu et al., Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys, PHYS REV B, 61(20), 2000, pp. R13337-R13340
Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries
Authors: Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Miotkowski, I Seong, MJ Alawadhi, H Ramdas, AK
Citation: W. Walukiewicz et al., Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries, PHYS REV L, 85(7), 2000, pp. 1552-1555
Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs
Authors: Yu, KM Walukiewicz, W Shan, W Wu, J Beeman, JW Ager, JW Haller, EE
Citation: Km. Yu et al., Increased electrical activation in the near-surface region of sulfur and nitrogen coimplanted GaAs, APPL PHYS L, 77(22), 2000, pp. 3607-3609
Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x
Authors: Yu, KM Walukiewicz, W Shan, W Wu, J Ager, JW Haller, EE Geisz, JF Ridgway, MC
Citation: Km. Yu et al., Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x, APPL PHYS L, 77(18), 2000, pp. 2858-2860
Nature of the fundamental band gap in GaNxP1-x alloys
Authors: Shan, W Walukiewicz, W Yu, KM Wu, J Ager, JW Haller, EE Xin, HP Tu, CW
Citation: W. Shan et al., Nature of the fundamental band gap in GaNxP1-x alloys, APPL PHYS L, 76(22), 2000, pp. 3251-3253
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Knap, W Suski, T Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Geisz, JF Olson, JM
Citation: C. Skierbiszewski et al., Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x, APPL PHYS L, 76(17), 2000, pp. 2409-2411
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Band anticrossing in GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Band anticrossing in GaInNAs alloys, PHYS REV L, 82(6), 1999, pp. 1221-1224
Effect of nitrogen on the band structure of GaInNAs alloys
Authors: Shan, W Walukiewicz, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: W. Shan et al., Effect of nitrogen on the band structure of GaInNAs alloys, J APPL PHYS, 86(4), 1999, pp. 2349-2351
Dependence of the fundamental band gap of AlxGa1-xN on alloy composition and pressure
Authors: Shan, W Ager, JW Yu, KM Walukiewicz, W Haller, EE Martin, MC McKinney, WR Yang, W
Citation: W. Shan et al., Dependence of the fundamental band gap of AlxGa1-xN on alloy composition and pressure, J APPL PHYS, 85(12), 1999, pp. 8505-8507
Local structures of free-standing AlxGa1-xN thin films studied by extendedx-ray absorption fine structure
Authors: Yu, KM Shan, W Glover, CJ Ridgway, MC Wong, WS Yang, W
Citation: Km. Yu et al., Local structures of free-standing AlxGa1-xN thin films studied by extendedx-ray absorption fine structure, APPL PHYS L, 75(26), 1999, pp. 4097-4099
Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation
Authors: Shan, W Yu, KM Walukiewicz, W Ager, JW Haller, EE Ridgway, MC
Citation: W. Shan et al., Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation, APPL PHYS L, 75(10), 1999, pp. 1410-1412
Risultati: 1-20 |