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Results: 1-25 | 26-33
Results: 1-25/33
Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid
Authors: Ide, T Shimizu, M Suzuki, A Shen, XQ Okumura, H Nemoto, T
Citation: T. Ide et al., Advantages of AlN/GaN metal insulator semiconductor field effect transistor using wet chemical etching with hot phosphoric acid, JPN J A P 1, 40(8), 2001, pp. 4785-4788
Optimization of GaN growth with Ga-polarity by referring to surface reconstruction reflection high-energy electron diffraction patterns
Authors: Shen, XQ Ide, T Cho, SH Shimizu, M Hara, S Okumura, H Sonoda, S Shimizu, S
Citation: Xq. Shen et al., Optimization of GaN growth with Ga-polarity by referring to surface reconstruction reflection high-energy electron diffraction patterns, JPN J A P 2, 40(1AB), 2001, pp. L23-L25
Synthesis and structure of lanthanide sandwich complexes with mixed cyclooctatetraenyl and chelating substituted-indenyl ligands
Authors: Huang, JL Shen, XQ Liu, QC Qian, YL Chan, ASC
Citation: Jl. Huang et al., Synthesis and structure of lanthanide sandwich complexes with mixed cyclooctatetraenyl and chelating substituted-indenyl ligands, CHIN J CHEM, 19(1), 2001, pp. 102-108
Growth and characterization of InGaN/GaN multiple quantum wells on Ga-polarity GaN by plasma-assisted molecular beam epitaxy
Authors: Shen, XQ Ide, T Shimizu, M Sasaki, F Okumura, H
Citation: Xq. Shen et al., Growth and characterization of InGaN/GaN multiple quantum wells on Ga-polarity GaN by plasma-assisted molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 99-102
Growth and characterizations of AlGaN/GaN heterostructures using multi-AlNbuffer layers in plasma-assisted molecular beam epitaxy
Authors: Shen, XQ Ide, T Cho, SH Shimizu, M Okumura, H Sonoda, S Shimizu, S
Citation: Xq. Shen et al., Growth and characterizations of AlGaN/GaN heterostructures using multi-AlNbuffer layers in plasma-assisted molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 447-452
Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE
Authors: Kitamura, T Cho, SH Ishida, Y Ide, T Shen, XQ Nakanishi, H Chichibu, S Okumura, H
Citation: T. Kitamura et al., Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE, J CRYST GR, 227, 2001, pp. 471-475
c-Jun potentiates the functional interaction between the amino and carboxyl termini of the androgen receptor
Authors: Bubulya, A Chen, SY Fisher, CJ Zheng, Z Shen, XQ Shemshedini, L
Citation: A. Bubulya et al., c-Jun potentiates the functional interaction between the amino and carboxyl termini of the androgen receptor, J BIOL CHEM, 276(48), 2001, pp. 44704-44711
Regulation of transcription by AMP-activated protein kinase - Phosphorylation of p300 blocks its interaction with nuclear receptors
Authors: Yang, WB Hong, YH Shen, XQ Frankowski, C Camp, HS Leff, T
Citation: Wb. Yang et al., Regulation of transcription by AMP-activated protein kinase - Phosphorylation of p300 blocks its interaction with nuclear receptors, J BIOL CHEM, 276(42), 2001, pp. 38341-38344
High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
Authors: Shen, XQ Ide, T Shimizu, M Okumura, H
Citation: Xq. Shen et al., High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy, J APPL PHYS, 89(10), 2001, pp. 5731-5733
Research on MRI brain segmentation algorithm with the application in model-based EEG/MEG
Authors: He, SJ Shen, XQ Yang, YM He, RJ Yan, WL
Citation: Sj. He et al., Research on MRI brain segmentation algorithm with the application in model-based EEG/MEG, IEEE MAGNET, 37(5), 2001, pp. 3741-3744
Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy
Authors: Iwamoto, C Shen, XQ Okumura, H Matuhata, H Ikuhara, Y
Citation: C. Iwamoto et al., Nanometric inversion domains in conventional molecular-beam-epitaxy GaN thin films observed by atomic-resolution high-voltage electron microscopy, APPL PHYS L, 79(24), 2001, pp. 3941-3943
Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy
Authors: Shen, XQ Shimizu, M Okumura, H Sasaki, F
Citation: Xq. Shen et al., Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 79(11), 2001, pp. 1599-1601
Characterization of polarity of wurtzite GaN film grown by molecular beam epitaxy using NH3
Authors: Sonoda, S Shimizu, S Shen, XQ Hara, S Okumura, H
Citation: S. Sonoda et al., Characterization of polarity of wurtzite GaN film grown by molecular beam epitaxy using NH3, JPN J A P 2, 39(3AB), 2000, pp. L202-L204
Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy
Authors: Shen, XQ Ide, T Cho, SH Shimizu, M Hara, S Okumura, H Sonoda, S Shimizu, S
Citation: Xq. Shen et al., Essential change in crystal qualities of GaN films by controlling lattice polarity in molecular beam epitaxy, JPN J A P 2, 39(1AB), 2000, pp. L16-L18
High-quality InGaN films grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy
Authors: Shen, XQ Ide, T Shimizu, M Hara, S Okumura, H
Citation: Xq. Shen et al., High-quality InGaN films grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy, JPN J A P 2, 39(12B), 2000, pp. L1270-L1272
c-Jun targets amino terminus of androgen receptor in regulating androgen-responsive transcription
Authors: Bubulya, A Zhou, XF Shen, XQ Fisher, CJ Shemshedini, L
Citation: A. Bubulya et al., c-Jun targets amino terminus of androgen receptor in regulating androgen-responsive transcription, ENDOCRINE, 13(1), 2000, pp. 55-62
The synthesis of a novel non-C-2 symmetric H-4-BINOL ligand and its application to titanium-catalyzed enantioselective addition of diethylzinc to aldehydes
Authors: Shen, XQ Guo, H Ding, KL
Citation: Xq. Shen et al., The synthesis of a novel non-C-2 symmetric H-4-BINOL ligand and its application to titanium-catalyzed enantioselective addition of diethylzinc to aldehydes, TETRAHEDR-A, 11(21), 2000, pp. 4321-4327
Synthesis and crystal structure of lanthanide sandwich complexes with mixed cyclooctatetraenyl and chelating ether side chain-cyclopentadienyl ligands: crystal structures of (eta(5)-MeOCH2CH2Cp)Nd(eta(8)-C8H8)(THF) and (eta(5)-C4H7OCH2C5H4)La(eta(8)-C8H8)(THF)
Authors: Liu, QC Shen, XQ Huang, JL Qian, YL Chan, ASC Wong, WT
Citation: Qc. Liu et al., Synthesis and crystal structure of lanthanide sandwich complexes with mixed cyclooctatetraenyl and chelating ether side chain-cyclopentadienyl ligands: crystal structures of (eta(5)-MeOCH2CH2Cp)Nd(eta(8)-C8H8)(THF) and (eta(5)-C4H7OCH2C5H4)La(eta(8)-C8H8)(THF), POLYHEDRON, 19(4), 2000, pp. 453-456
Uncertainty propagation and the matching of junctions as feature groupings
Authors: Shen, XQ Palmer, P
Citation: Xq. Shen et P. Palmer, Uncertainty propagation and the matching of junctions as feature groupings, IEEE PATT A, 22(12), 2000, pp. 1381-1395
Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy
Authors: Shen, XQ Ide, T Cho, SH Shimizu, M Hara, S Okumura, H Sonoda, S Shimizu, S
Citation: Xq. Shen et al., Realization of Ga-polarity GaN films in radio-frequency plasma-assisted molecular beam epitaxy, J CRYST GR, 218(2-4), 2000, pp. 155-160
Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy
Authors: Shen, XQ Ramvall, P Riblet, P Aoyagi, Y Hosi, K Tanaka, S Suemune, I
Citation: Xq. Shen et al., Investigations of optical and electrical properties of In-doped GaN films grown by gas-source molecular beam epitaxy, J CRYST GR, 209(2-3), 2000, pp. 396-400
A wavelet interpolation Galerkin method for the numerical solution of PDEsin 2D magnetostatic field
Authors: Yan, WL Shen, XQ Shi, LK
Citation: Wl. Yan et al., A wavelet interpolation Galerkin method for the numerical solution of PDEsin 2D magnetostatic field, IEEE MAGNET, 36(4), 2000, pp. 639-643
Differential activation of peroxisome proliferator-activated receptor-gamma by troglitazone and rosiglitazone
Authors: Camp, HS Li, O Wise, SC Hong, YH Frankowski, CL Shen, XQ Vanbogelen, R Leff, T
Citation: Hs. Camp et al., Differential activation of peroxisome proliferator-activated receptor-gamma by troglitazone and rosiglitazone, DIABETES, 49(4), 2000, pp. 539-547
Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction
Authors: Shen, XQ Ide, T Cho, SH Shimizu, M Hara, S Okumura, H
Citation: Xq. Shen et al., Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction, APPL PHYS L, 77(24), 2000, pp. 4013-4015
Improvements of the optical and electrical properties of GaN films by using in-doping method during growth
Authors: Shen, XQ Ramvall, P Riblet, P Aoyagi, Y
Citation: Xq. Shen et al., Improvements of the optical and electrical properties of GaN films by using in-doping method during growth, JPN J A P 2, 38(4B), 1999, pp. L411-L413
Risultati: 1-25 | 26-33