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Results:
1-7
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Results: 7
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Citation: U. Schmid et al., High temperature performance of NMOS integrated inverters and ring oscillators in 6H-SiC, IEEE DEVICE, 47(4), 2000, pp. 687-691
Authors:
Shah, PB
Smith, DD
Griffin, TE
Jones, KA
Sheppard, ST
Citation: Pb. Shah et al., Carrier transport related analysis of high-power AlGaN/GaN HEMT structures, IEEE DEVICE, 47(2), 2000, pp. 308-312
Authors:
Lades, M
Berz, D
Schmid, U
Sheppard, ST
Kaminski, N
Wondrak, W
Wachutka, G
Citation: M. Lades et al., Numerical simulation of implanted top-gate GH-SiC JFET characteristics, MAT SCI E B, 61-2, 1999, pp. 415-418
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Niemann, E
Citation: U. Schmid et al., Electrical characterization of 6H-SiC enhancement-mode MOSFETs at high temperatures, MAT SCI E B, 61-2, 1999, pp. 493-496
Authors:
Sheppard, ST
Doverspike, K
Pribble, WL
Allen, ST
Palmour, JW
Kehias, LT
Jenkins, TJ
Citation: St. Sheppard et al., High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates, IEEE ELEC D, 20(4), 1999, pp. 161-163
Authors:
Schmid, U
Sheppard, ST
Wondrak, W
Citation: U. Schmid et al., Circular and linear enhancement-mode 6H-SiC MOSFETs for high temperature applications, J ELEC MAT, 28(3), 1999, pp. 148-153
Authors:
Schmid, U
Getto, R
Sheppard, ST
Wondrak, W
Citation: U. Schmid et al., Temperature behavior of specific contact resistance and resistivity on nitrogen implanted 6H-SiC with titanium silicide ohmic contacts, J APPL PHYS, 85(5), 1999, pp. 2681-2686
Risultati:
1-7
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