Authors: Jang, SL Sheu, CJ Twu, CB

Citation: Sl. Jang et al., A compact drain-current model for stacked-gate flash memory cells, SOL ST ELEC, 44(8), 2000, pp. 1447-1453

Authors: Jang, SL Sheu, CJ

Citation: Sl. Jang et Cj. Sheu, A non-local gate current and oxide trapping charge generation model for lightly doped drain and single-drain nMOSFETs, SOL ST ELEC, 44(7), 2000, pp. 1305-1314

Authors: Chyau, CG Jang, SL Sheu, CJ

Citation: Cg. Chyau et al., A physics-based short-channel SOI MOSFET model for fully-depleted single drain and LDD devices, SOL ST ELEC, 44(3), 2000, pp. 487-499

Authors: Sheu, CJ Jang, SL

Citation: Cj. Sheu et Sl. Jang, A physics-based electron gate current model for fully depleted SOI MOSFETs, SOL ST ELEC, 44(10), 2000, pp. 1799-1806

Authors: Sheu, CJ Jang, SL

Citation: Cj. Sheu et Sl. Jang, A MOSFET gate current model with the direct tunneling mechanism, SOL ST ELEC, 44(10), 2000, pp. 1819-1824

Authors: Jang, SL Chyau, CG Sheu, CJ

Citation: Sl. Jang et al., Complete deep-submicron metal-oxide-semiconductor field-effect-transistor drain current model including quantum mechanical effects, JPN J A P 1, 38(2A), 1999, pp. 687-688