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Results:
1-14
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Results: 14
Authors:
Shih, PS
Zan, HW
Chang, TC
Huang, TY
Chang, CY
Citation: Ps. Shih et al., Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors, JPN J A P 1, 39(7A), 2000, pp. 3879-3882
Authors:
Shih, PS
Chang, TC
Huang, TY
Yeh, CF
Chang, CY
Citation: Ps. Shih et al., Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition, JPN J A P 1, 39(10), 2000, pp. 5758-5762
Authors:
Shih, PS
Chang, TC
Liang, CY
Huang, TY
Chang, CY
Citation: Ps. Shih et al., Improvements of amorphous-silicon inverted-staggered thin-film transistorsusing high-temperature-deposited Al gate with chemical mechanical polishing, EL SOLID ST, 3(5), 2000, pp. 235-238
Authors:
Luo, JS
Lin, WT
Chang, CY
Shih, PS
Pan, FM
Citation: Js. Luo et al., Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1-x-yGexCy, J VAC SCI A, 18(1), 2000, pp. 143-148
Authors:
Huang, JC
Luo, JS
Lin, WT
Chang, CY
Shih, PS
Citation: Jc. Huang et al., Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing, SEMIC SCI T, 15(10), 2000, pp. 941-945
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
Authors:
Chang, CY
Lee, YS
Huang, TY
Shih, PS
Lin, CW
Citation: Cy. Chang et al., The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor, MATER CH PH, 62(2), 2000, pp. 153-157
Authors:
Luo, JS
Lin, WT
Chang, CY
Shih, PS
Citation: Js. Luo et al., Interfacial reactions of Ni/Si0.76Ge0.24 and Ni/Si1-x-yGexCy by vacuum annealing and pulsed KrF laser annealing, NUCL INST B, 169, 2000, pp. 124-128
Authors:
Luo, JS
Lin, WT
Chang, CY
Shih, PS
Chang, TC
Citation: Js. Luo et al., Pulsed KrF laser annealing of Mo/Si0.76Ge0.24, NUCL INST B, 169, 2000, pp. 129-134
Authors:
Zan, HW
Shih, PS
Chang, TC
Chang, CY
Citation: Hw. Zan et al., Dimensional effects on the reliability of polycrystalline silicon thin-film transistors, MICROEL REL, 40(8-10), 2000, pp. 1479-1483
Authors:
Luo, JS
Hang, YL
Lin, WT
Chang, CY
Shih, PS
Citation: Js. Luo et al., Interfacial reactions of Co/Si0.76Ge0.24 and Co(Si0.76Ge0.24)/Si0.76Ge0.24by pulsed KrF laser annealing, J MATER RES, 14(8), 1999, pp. 3433-3438
Authors:
Shih, PS
Chang, CY
Chang, TC
Huang, TY
Peng, DZ
Yeh, CF
Citation: Ps. Shih et al., A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition, IEEE ELEC D, 20(8), 1999, pp. 421-423
Authors:
Luo, JS
Lin, WT
Chang, CY
Shih, PS
Pan, FM
Chang, TC
Citation: Js. Luo et al., Characterization of Si1-x-yGexCy films grown by C+ implantation and subsequent pulsed laser annealing, MATER CH PH, 60(1), 1999, pp. 58-62
Authors:
Luo, JS
Lin, WT
Chang, CY
Shih, PS
Citation: Js. Luo et al., Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300 degrees C, THIN SOL FI, 346(1-2), 1999, pp. 207-211
Authors:
Luo, JS
Huang, JC
Lin, WT
Chang, CY
Shih, PS
Citation: Js. Luo et al., Effects of Mo-free C40Ti(Si1-xGex)(2) precursors and the thickness of an interposed Mo layer on the enhanced formation of C54Ti(Si1-xGex)(2), APPL PHYS L, 75(22), 1999, pp. 3482-3484
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