Authors:
Jang, DH
Lee, JK
Park, KH
Cho, HS
Nam, ES
Park, CS
Shim, JI
Jeong, JC
Jeong, KT
Park, SJ
Citation: Dh. Jang et al., High power operations of 980 nm Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs pump lasers prepared by multi-step metalorganic vapor phase epitaxialgrowth with ion implanted channels, JPN J A P 1, 38(8), 1999, pp. 4756-4763
Citation: Kh. Chung et Ji. Shim, A new polarization-insensitive 1.55-mu m InGaAs(P)-InGaAsP multiquantum-well electroabsorption modulator using a strain-compensating layer, IEEE J Q EL, 35(5), 1999, pp. 730-736