Authors:
Ono, N
Kitamura, K
Nakajima, K
Shimanuki, Y
Citation: N. Ono et al., Measurement of Young's modulus of silicon single crystal at high temperature and its dependency on boron concentration using the flexural vibration method, JPN J A P 1, 39(2A), 2000, pp. 368-371
Citation: J. Furukawa et al., Annealing behavior of light scattering tomography defect in the denuded zone of Si wafers, JPN J A P 1, 38(3A), 1999, pp. 1295-1299