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Results: 1
A study of interface trap generation by Fowler-Nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides
Authors:
Shiue, JH Lee, JYM Chao, TS
Citation:
Jh. Shiue et al., A study of interface trap generation by Fowler-Nordheim and substrate-hot-carrier stresses for 4-nm thick gate oxides, IEEE DEVICE, 46(8), 1999, pp. 1705-1710
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