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Vartuli, CB
Giannuzzi, LA
Shofner, TL
Brown, SR
Rossie, B
Hillion, F
Mills, RH
Antonell, M
Irwin, RB
Purcell, BM
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Citation: Js. Huang et al., Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection, THIN SOL FI, 397(1-2), 2001, pp. 186-193
Citation: Js. Huang et al., Direct observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density, J APPL PHYS, 89(4), 2001, pp. 2130-2133
Authors:
Huang, JS
Chen, C
Yeh, CC
Tu, KN
Shofner, TL
Drown, JL
Irwin, RB
Vartuli, CB
Citation: Js. Huang et al., Effect of current crowding on contact failure in heavily doped n(+)- and p(+)-silicon-on-insulator, J MATER RES, 15(11), 2000, pp. 2387-2392
Authors:
Stevie, FA
Downey, SW
Brown, SR
Shofner, TL
Decker, MA
Dingle, T
Christman, L
Citation: Fa. Stevie et al., Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry, J VAC SCI B, 17(6), 1999, pp. 2476-2482