Authors: Huang, JS Gates, AS Kang, SH Shofner, TL Ashton, RA Obeng, YS

Citation: Js. Huang et al., Comparative study on the effect of misalignment on bordered and borderlesscontacts, J ELEC MAT, 30(4), 2001, pp. 360-366

Authors: Stevie, FA Vartuli, CB Giannuzzi, LA Shofner, TL Brown, SR Rossie, B Hillion, F Mills, RH Antonell, M Irwin, RB Purcell, BM

Citation: Fa. Stevie et al., Application of focused ion beam lift-out specimen preparation to TEM, SEM,STEM, AES and SIMS analysis, SURF INT AN, 31(5), 2001, pp. 345-351

Authors: Huang, JS Deng, XJ Yih, PH Shofner, TL Obeng, YS Darling, C

Citation: Js. Huang et al., Effect of silicon nitride capping layer on via electromigration and failure criterion methodology in multilevel interconnection, THIN SOL FI, 397(1-2), 2001, pp. 186-193

Authors: Huang, JS Shofner, TL Zhao, J

Citation: Js. Huang et al., Direct observation of void morphology in step-like electromigration resistance behavior and its correlation with critical current density, J APPL PHYS, 89(4), 2001, pp. 2130-2133

Authors: Huang, JS Chen, C Yeh, CC Tu, KN Shofner, TL Drown, JL Irwin, RB Vartuli, CB

Citation: Js. Huang et al., Effect of current crowding on contact failure in heavily doped n(+)- and p(+)-silicon-on-insulator, J MATER RES, 15(11), 2000, pp. 2387-2392

Authors: Stevie, FA Downey, SW Brown, SR Shofner, TL Decker, MA Dingle, T Christman, L

Citation: Fa. Stevie et al., Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry, J VAC SCI B, 17(6), 1999, pp. 2476-2482