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Results: 26-34/34
Authors:
Glasberg, S
Finkelstein, G
Shtrikman, H
Bar-Joseph, I
Citation: S. Glasberg et al., Comparative study of the negatively and positively charged excitons in GaAs quantum wells, PHYS REV B, 59(16), 1999, pp. R10425-R10428
Authors:
Hanein, Y
Nenadovic, N
Shahar, D
Shtrikman, H
Yoon, I
Li, CC
Tsui, DC
Citation: Y. Hanein et al., Linking insulator-to-metal transitions at zero and finite magnetic fields, NATURE, 400(6746), 1999, pp. 735-737
Authors:
Shtrikman, H
Hanien, Y
Soibel, A
Meirav, U
Citation: H. Shtrikman et al., (N11)A GaAs: a preferable platform for high quality GaAs/AlGaAs structures, MICROELEC J, 30(4-5), 1999, pp. 323-328
Authors:
Shtrikman, H
Hanein, Y
Soibel, A
Meirav, U
Citation: H. Shtrikman et al., Superior molecular beam epitaxy (MBE) growth on (N 1 1)A GaAs, J CRYST GR, 202, 1999, pp. 221-225
Authors:
Abulafia, Y
Wolfus, Y
McElfresh, M
Shaulov, A
Yeshurun, Y
Paltiel, Y
Shtrikman, H
Zeldov, E
Citation: Y. Abulafia et al., Hall-array gradiometer for measurement of the magnetic induction vector insuperconductors, J APPL PHYS, 85(8), 1999, pp. 5471-5473
Authors:
Paltiel, Y
Fuchs, DT
Zeldov, E
Myasoedov, YN
Shtrikman, H
Rappaport, ML
Andrei, EY
Citation: Y. Paltiel et al., Surface barrier dominated transport in NbSe2, PHYS REV B, 58(22), 1998, pp. R14763-R14766
Authors:
Hanein, Y
Shahar, D
Yoon, J
Li, CC
Tsui, DC
Shtrikman, H
Citation: Y. Hanein et al., Observation of the metal-insulator transition in two-dimensional n-type GaAs, PHYS REV B, 58(20), 1998, pp. R13338-R13340
Authors:
Yahel, E
Tsukernik, A
Palevski, A
Shtrikman, H
Citation: E. Yahel et al., Evidence for bulk current in Hall bar samples and potential screening in the integer quantum Hall effect, PHYS REV L, 81(23), 1998, pp. 5201-5204
Authors:
Goldhaber-Gordon, D
Gores, J
Kastner, MA
Shtrikman, H
Mahalu, D
Meirav, U
Citation: D. Goldhaber-gordon et al., From the Kondo regime to the mixed-valence regime in a single-electron transistor, PHYS REV L, 81(23), 1998, pp. 5225-5228