AAAAAA

   
Results: 1-25 | 26-50 | 51-57 |
Results: 51-57/57
Etching of III nitrides
Authors: Pearton, SJ Shul, RJ
Citation: Sj. Pearton et Rj. Shul, Etching of III nitrides, SEM SEMIMET, 50, 1998, pp. 103-126
Special issue - Power semiconductor devices and processes - Preface
Authors: Shul, RJ Ren, F Wolfgang, E
Citation: Rj. Shul et al., Special issue - Power semiconductor devices and processes - Preface, SOL ST ELEC, 42(12), 1998, pp. 2117-2117
Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics
Authors: Ren, F Abernathy, CR MacKenzie, JD Gila, BP Pearton, SJ Hong, M Marcus, MA Schurman, MJ Baca, AG Shul, RJ
Citation: F. Ren et al., Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics, SOL ST ELEC, 42(12), 1998, pp. 2177-2181
Comparison of plasma etch techniques for III-V nitrides
Authors: Shul, RJ Vawter, GA Willison, CG Bridges, MM Lee, JW Pearton, SJ Abernathy, CR
Citation: Rj. Shul et al., Comparison of plasma etch techniques for III-V nitrides, SOL ST ELEC, 42(12), 1998, pp. 2259-2267
High-density plasma etch selectivity for the III-V nitrides
Authors: Shul, RJ Willison, CG Bridges, MM Han, J Lee, JW Pearton, SJ Abernathy, CR MacKenzie, JD Donovan, SM
Citation: Rj. Shul et al., High-density plasma etch selectivity for the III-V nitrides, SOL ST ELEC, 42(12), 1998, pp. 2269-2276
Cl-2-based dry etching of the AlGaInN system in inductively coupled plasmas
Authors: Cho, H Vartuli, CB Abernathy, CR Donovan, SM Pearton, SJ Shul, RJ Han, J
Citation: H. Cho et al., Cl-2-based dry etching of the AlGaInN system in inductively coupled plasmas, SOL ST ELEC, 42(12), 1998, pp. 2277-2281
ICP etching of SiC
Authors: Wang, JJ Lambers, ES Pearton, SJ Ostling, M Zetterling, CM Grow, JM Ren, F Shul, RJ
Citation: Jj. Wang et al., ICP etching of SiC, SOL ST ELEC, 42(12), 1998, pp. 2283-2288
Risultati: 1-25 | 26-50 | 51-57 |