Authors:
Simanowski, S
Mermelstein, C
Walther, M
Herres, N
Kiefer, R
Rattunde, M
Schmitz, J
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Growth and layer structure optimization of 2.26 mu m (AlGaIn)(AsSb) diode lasers for room temperature operation, J CRYST GR, 227, 2001, pp. 595-599
Authors:
Simanowski, S
Herres, N
Mermelstein, C
Kiefer, R
Schmitz, J
Walther, M
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Strain adjustment in (GaIn)(AsSb)/(A1Ga)(AsSb) QWs for 2.3-2.7 mu m laser structures, J CRYST GR, 209(1), 2000, pp. 15-20
Authors:
Mermelstein, C
Simanowski, S
Mayer, M
Kiefer, R
Schmitz, J
Walther, M
Wagner, J
Citation: C. Mermelstein et al., Room-temperature low-threshold low-loss continuous-wave operation of 2.26 mu m GaInAsSb/AlGaAsSb quantum-well laser diodes, APPL PHYS L, 77(11), 2000, pp. 1581-1583
Authors:
Simanowski, S
Walther, M
Schmitz, J
Kiefer, R
Herres, N
Fuchs, F
Maier, M
Mermelstein, C
Wagner, J
Weimann, G
Citation: S. Simanowski et al., Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb)layers for 2.0-2.5 mu m laser structures on GaSb substrates, J CRYST GR, 202, 1999, pp. 849-853