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Results: 51-56/56
Authors:
Claeys, C
Simoen, E
Poyai, A
Czerwinski, A
Citation: C. Claeys et al., Electrical quality assessment of epitaxial wafers based on p-n junction diagnostics, J ELCHEM SO, 146(9), 1999, pp. 3429-3434
Authors:
Claeys, C
Poyai, A
Simoen, E
Czerwinski, A
Katcki, J
Citation: C. Claeys et al., p-n junction diagnostics to determine surface and bulk generation/recombination properties of silicon substrates, J ELCHEM SO, 146(3), 1999, pp. 1151-1157
Authors:
Gramenova, E
Jansen, P
Simoen, E
Vanhellemont, J
Dupas, L
Deferm, L
Citation: E. Gramenova et al., Impact of processing parameters on leakage current and defect behavior of n(+)p silicon junction diodes, J ELCHEM SO, 146(1), 1999, pp. 359-363
Authors:
Poyai, A
Simoen, E
Claeys, C
Citation: A. Poyai et al., Current transients in almost-ideal Czochralski silicon p-n junction diodes, APPL PHYS L, 75(21), 1999, pp. 3342-3344
Authors:
Loo, R
Caymax, M
Simoen, E
Howard, D
Goryll, M
Klaes, D
Vescan, L
Gravesteijn, D
Pettersson, H
Zhang, X
Citation: R. Loo et al., Influence of grown-in defects on the optical and electrical properties of Si/Si1-xGex/Si heterostructures, THIN SOL FI, 336(1-2), 1998, pp. 227-231
Authors:
Ohyama, H
Simoen, E
Kuroda, S
Claeys, C
Takami, Y
Hakata, T
Sunaga, H
Citation: H. Ohyama et al., Impact of high energy particles on InGaP/InGaAs pseudomorphic HEMTs, IEEE NUCL S, 45(6), 1998, pp. 2861-2866