Login
|
New Account
AAAAAA
ITA
ENG
Results:
1-4
|
Results: 4
Photoenhanced wet etching of gallium nitride in KOH-based solutions
Authors:
Skriniarova, J Bochem, P Fox, A Kordos, P
Citation:
J. Skriniarova et al., Photoenhanced wet etching of gallium nitride in KOH-based solutions, J VAC SCI B, 19(5), 2001, pp. 1721-1727
Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs
Authors:
Lalinsky, T Skriniarova, J Kuzmik, J Hasenohrl, S Fox, A Tomaska, M Mozolova, Z Kovacik, T Krajcer, A Kordos, P
Citation:
T. Lalinsky et al., Technology and performance of 150 nm gate length InGaP/InGaAs/GaAs pHEMTs, VACUUM, 61(2-4), 2001, pp. 323-327
T-shaped gates for heterostructure field effect transistors
Authors:
Lalinsky, T Skriniarova, J Kostic, I van der Hart, A Hrkut, P Hascik, S Matay, L Mozolova, Z Kordos, P
Citation:
T. Lalinsky et al., T-shaped gates for heterostructure field effect transistors, VACUUM, 61(2-4), 2001, pp. 329-332
InGaAs/InGaP HEMTs: technological optimization and analytical modelling
Authors:
Kuzmik, J Hasenohrl, S Kudela, R Hascik, S Mozolova, Z Lalinsky, T Vogrincic, P Breza, J Skriniarova, J Fox, A Kordos, P
Citation:
J. Kuzmik et al., InGaAs/InGaP HEMTs: technological optimization and analytical modelling, VACUUM, 61(2-4), 2001, pp. 333-337
Risultati:
1-4
|