Authors: Skromme, BJ Martinez, GL

Citation: Bj. Skromme et Gl. Martinez, Optical activation behavior of ion implanted acceptor species in GaN, MRS I J N S, 5, 2000, pp. NIL_436-NIL_441

Authors: Martinez, GL Curiel, MR Skromme, BJ Molnar, RJ

Citation: Gl. Martinez et al., Surface recombination and sulfide passivation of GaN, J ELEC MAT, 29(3), 2000, pp. 325-331

Authors: Skromme, BJ Luckowski, E Moore, K Bhatnagar, M Weitzel, CE Gehoski, T Ganser, D

Citation: Bj. Skromme et al., Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity, J ELEC MAT, 29(3), 2000, pp. 376-383

Authors: Skromme, BJ Jayapalan, J Vaudo, RP Phanse, VM

Citation: Bj. Skromme et al., Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 74(16), 1999, pp. 2358-2360

Authors: Jayapalan, J Skromme, BJ Vaudo, RP Phanse, VM

Citation: J. Jayapalan et al., Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1188-1190