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Results: 7
Swift heavy ion irradiation effect on the surface of sapphire single crystals
Authors:
Skuratov, VA Zagorski, DL Efimov, AE Kluev, VA Toporov, YP Mchedlishvili, BV
Citation:
Va. Skuratov et al., Swift heavy ion irradiation effect on the surface of sapphire single crystals, RADIAT MEAS, 34(1-6), 2001, pp. 571-576
Interface states and deep-level centers in silicon-on-insulator structures
Authors:
Antonova, IV Stano, J Nikolaev, DV Naumova, OV Popov, VP Skuratov, VA
Citation:
Iv. Antonova et al., Interface states and deep-level centers in silicon-on-insulator structures, SEMICONDUCT, 35(8), 2001, pp. 912-917
Hundred MeV heavy ion irradiation effect on boron diffusion in Si
Authors:
Skuratov, VA Dinu, N Antonova, IV Obodnikov, VI
Citation:
Va. Skuratov et al., Hundred MeV heavy ion irradiation effect on boron diffusion in Si, VACUUM, 63(4), 2001, pp. 571-575
Thermal donor formation in crystalline silicon irradiated by high energy ions
Authors:
Neustroev, EP Antonova, IV Popov, VP Stas, VF Skuratov, VA Didyk, AY
Citation:
Ep. Neustroev et al., Thermal donor formation in crystalline silicon irradiated by high energy ions, NUCL INST B, 171(4), 2000, pp. 443-447
Behavior of alpha-emitting radionuclides in groundwaters contaminated withliquid radioactive wastes
Authors:
Korotkevich, VM Skuratov, VA Zubkov, AA Semenov, EN Mikhailova, NA
Citation:
Vm. Korotkevich et al., Behavior of alpha-emitting radionuclides in groundwaters contaminated withliquid radioactive wastes, RADIOCHEMIS, 41(2), 1999, pp. 186-189
Impact of high energy ion implantation on dopant distribution in silicon
Authors:
Neustroev, EP Antonova, IV Obodnikov, VI Popov, VP Skuratov, VA Smagulova, SA Didyk, AY
Citation:
Ep. Neustroev et al., Impact of high energy ion implantation on dopant distribution in silicon, NUCL INST B, 146(1-4), 1998, pp. 323-328
Luminescence of LiF and alpha-Al2O3 crystals under high density excitation
Authors:
Skuratov, VA
Citation:
Va. Skuratov, Luminescence of LiF and alpha-Al2O3 crystals under high density excitation, NUCL INST B, 146(1-4), 1998, pp. 385-392
Risultati:
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