Authors: Liu, WK Lubyshev, DI Specht, P Zhao, R Weber, ER Gebauer, J SpringThorpe, AJ Streater, RW Vijarnwannaluk, S Songprakob, W Zallen, R

Citation: Wk. Liu et al., Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4, J VAC SCI B, 18(3), 2000, pp. 1594-1597

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Citation: W. Songprakob et al., Infrared studies of hole-plasmon excitations in heavily-doped p-type MBE-grown GaAs : C, PHYS REV B, 62(7), 2000, pp. 4501-4510