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Results: 1-10 |
Results: 10
High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether)
Authors: Standaert, TEFM Matsuo, PJ Li, X Oehrlein, GS Lu, TM Gutmann, R Rosenmayer, CT Bartz, JW Langan, JG Entley, WR
Citation: Tefm. Standaert et al., High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether), J VAC SCI A, 19(2), 2001, pp. 435-446
Etching of xerogel in high-density fluorocarbon plasmas
Authors: Standaert, TEFM Joseph, EA Oehrlein, GS Jain, A Gill, WN Wayner, PC Plawsky, JL
Citation: Tefm. Standaert et al., Etching of xerogel in high-density fluorocarbon plasmas, J VAC SCI A, 18(6), 2000, pp. 2742-2748
Pattern transfer into low dielectric constant materials by high-density plasma etching
Authors: Oehrlein, GS Standaert, TEFM Matsuo, PJ
Citation: Gs. Oehrlein et al., Pattern transfer into low dielectric constant materials by high-density plasma etching, SOL ST TECH, 43(5), 2000, pp. 125
Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch
Authors: Matsuo, PJ Standaert, TEFM Allen, SD Oehrlein, GS Dalton, TJ
Citation: Pj. Matsuo et al., Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch, J VAC SCI B, 17(4), 1999, pp. 1435-1447
Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing
Authors: Schaepkens, M Rueger, NR Beulens, JJ Li, X Standaert, TEFM Matsuo, PJ Oehrlein, GS
Citation: M. Schaepkens et al., Effect of capacitive coupling on inductively coupled fluorocarbon plasma processing, J VAC SCI A, 17(6), 1999, pp. 3272-3280
Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor
Authors: Rueger, NR Doemling, MF Schaepkens, M Beulens, JJ Standaert, TEFM Oehrlein, GS
Citation: Nr. Rueger et al., Selective etching of SiO2 over polycrystalline silicon using CHF3 in an inductively coupled plasma reactor, J VAC SCI A, 17(5), 1999, pp. 2492-2502
Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2
Authors: Standaert, TEFM Matsuo, PJ Allen, SD Oehrlein, GS Dalton, TJ
Citation: Tefm. Standaert et al., Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2, J VAC SCI A, 17(3), 1999, pp. 741-748
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism
Authors: Schaepkens, M Standaert, TEFM Rueger, NR Sebel, PGM Oehrlein, GS Cook, JM
Citation: M. Schaepkens et al., Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism, J VAC SCI A, 17(1), 1999, pp. 26-37
Surface science issues in plasma etching
Authors: Oehrlein, GS Doemling, MF Kastenmeier, BEE Matsuo, PJ Rueger, NR Schaepkens, M Standaert, TEFM
Citation: Gs. Oehrlein et al., Surface science issues in plasma etching, IBM J RES, 43(1-2), 1999, pp. 181-197
Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching
Authors: Hsu, Y Standaert, TEFM Oehrlein, GS Kuan, TS Sayre, E Rose, K Lee, KY Rossnagel, SM
Citation: Y. Hsu et al., Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching, J VAC SCI B, 16(6), 1998, pp. 3344-3348
Risultati: 1-10 |