Citation: Pb. Joyce et al., Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots, SURF SCI, 492(3), 2001, pp. 345-353
Authors:
Steans, PH
Neave, JH
Bell, GR
Zhang, J
Joyce, BA
Jones, TS
Citation: Ph. Steans et al., A new mechanism for reentrant behaviour in semiconductor epitaxy: a reflection high-energy electron diffraction study of the growth of GaAs(111)A thin films, SURF SCI, 459(3), 2000, pp. 277-286