Authors: Narasimhan, G Steinbruchel, C

Citation: G. Narasimhan et C. Steinbruchel, Analysis of Langmuir probe data: Analytical parametrization, and the importance of the end effect, J VAC SCI A, 19(1), 2001, pp. 376-378

Authors: Kizil, H Kim, G Steinbruchel, C Zhao, B

Citation: H. Kizil et al., TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology, J ELEC MAT, 30(4), 2001, pp. 345-348

Authors: Mallikarjunan, A Murarka, SP Steinbruchel, C Kumar, A Bakhru, H

Citation: A. Mallikarjunan et al., Electrical behavior of Cu thin fluorinated PECVD oxide MIS capacitors, J ELCHEM SO, 147(9), 2000, pp. 3502-3507

Authors: Karamcheti, A Steinbruchel, C

Citation: A. Karamcheti et C. Steinbruchel, Parametrization of Laframboise's results for spherical and cylindrical Langmuir probes, J VAC SCI A, 17(5), 1999, pp. 3051-3056

Authors: Kim, SE Steinbruchel, C

Citation: Se. Kim et C. Steinbruchel, The interaction of metals and barrier layers with fluorinated silicon oxides, SOL ST ELEC, 43(6), 1999, pp. 1019-1023

Authors: Kim, SE Steinbruchel, C

Citation: Se. Kim et C. Steinbruchel, Metal/fluorinated-dielectric interactions in microelectronic interconnections: Rapid diffusion of fluorine through aluminum, APPL PHYS L, 75(13), 1999, pp. 1902-1904