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Results: 1-9 |
Results: 9
The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors
Authors: Cubaynes, FN Stolk, PA Verhoeven, J Roozeboom, F Woerlee, PH
Citation: Fn. Cubaynes et al., The influence of polysilicon gate morphology on dopant activation and deactivation kinetics in deep-submicron CMOS transistors, MAT SC S PR, 4(4), 2001, pp. 351-356
Flat band voltage shift and oxide properties after rapid thermal annealing
Authors: O'Sullivan, BJ Hurley, PK Cubaynes, FN Stolk, PA Widdershoven, FP
Citation: Bj. O'Sullivan et al., Flat band voltage shift and oxide properties after rapid thermal annealing, MICROEL REL, 41(7), 2001, pp. 1053-1056
Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon
Authors: Mannino, G Stolk, PA Cowern, NEB de Boer, WB Dirks, AG Roozeboom, F van Berkum, JGM Woerlee, PH Toan, NN
Citation: G. Mannino et al., Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon, APPL PHYS L, 78(7), 2001, pp. 889-891
A 0.13 mu m poly-SiGe gate CMOS technology for low-voltage mixed-signal applications
Authors: Ponomarev, YV Stolk, PA Dachs, CJJ Montree, AH
Citation: Yv. Ponomarev et al., A 0.13 mu m poly-SiGe gate CMOS technology for low-voltage mixed-signal applications, IEEE DEVICE, 47(7), 2000, pp. 1507-1513
High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates
Authors: Ponomarev, YV Stolk, PA Salm, C Schmitz, J Woerlee, PH
Citation: Yv. Ponomarev et al., High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates, IEEE DEVICE, 47(4), 2000, pp. 848-855
Cluster ripening and transient enhanced diffusion in silicon
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Cluster ripening and transient enhanced diffusion in silicon, MAT SC S PR, 2(4), 1999, pp. 369-376
Oxidation enhanced diffusion during the growth of ultrathin oxides
Authors: Stolk, PA van Brandenburg, ACMC Montree, AH
Citation: Pa. Stolk et al., Oxidation enhanced diffusion during the growth of ultrathin oxides, MAT SC S PR, 2(1), 1999, pp. 29-33
Dopant profile engineering of advanced Si MOSFET's using ion implantation
Authors: Stolk, PA Ponomarev, YV Schmitz, J van Brandenburg, ACMC Roes, R Montree, AH Woerlee, PH
Citation: Pa. Stolk et al., Dopant profile engineering of advanced Si MOSFET's using ion implantation, NUCL INST B, 148(1-4), 1999, pp. 242-246
Energetics of self-interstitial clusters in Si
Authors: Cowern, NEB Mannino, G Stolk, PA Roozeboom, F Huizing, HGA van Berkum, JGM Cristiano, F Claverie, A Jaraiz, M
Citation: Neb. Cowern et al., Energetics of self-interstitial clusters in Si, PHYS REV L, 82(22), 1999, pp. 4460-4463
Risultati: 1-9 |