Authors: Karachevtseva, MV Strakhov, VA Yaremenko, NG

Citation: Mv. Karachevtseva et al., Band-edge photoluminescence of heavily doped InxGa1-xAs1-yPy (lambda=1.2 mu m), SEMICONDUCT, 33(8), 1999, pp. 830-835

Authors: Galiev, GB Karachevtseva, MV Mokerov, VG Strakhov, VA Yaremenko, NG

Citation: Gb. Galiev et al., Photoluminescence investigations of amphoteric behavior of Si-dopant in GaAs, DOKL AKAD N, 367(5), 1999, pp. 613-616

Authors: Mokerov, VG Fedorov, YV Guk, AV Yaremenko, NG Strakhov, VA

Citation: Vg. Mokerov et al., Photoluminescence of the two dimensional electron gas at the metamorphic N-InAlAs/InGaAs/InAlAs-heterostructures on the GaAs(100)-substrates, DOKL AKAD N, 362(2), 1998, pp. 194-197