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Results: 1-25/32
Authors:
Kosugi, T
Umeda, Y
Suemitsu, T
Enoki, T
Yamane, Y
Citation: T. Kosugi et al., Frequency dispersion in drain conductance of InAlAs/InGaAs hight-electron mobility transisters (HEMTs) and its relationship with impact ionization, JPN J A P 1, 40(4B), 2001, pp. 2725-2727
Authors:
Suemitsu, T
Ishii, T
Ishii, Y
Citation: T. Suemitsu et al., Gate and recess engineering for ultrahigh-speed InP-based HEMTs, IEICE TR EL, E84C(10), 2001, pp. 1283-1288
Authors:
Iga, F
Suemitsu, T
Hiura, S
Takagi, K
Umeo, K
Sera, M
Takabatake, T
Citation: F. Iga et al., Thermoelectric properties of the Kondo semiconductor: Yb1-xLuxB12, J MAGN MAGN, 226, 2001, pp. 137-138
Authors:
Ohtubo, Y
Suemitsu, T
Shiobara, S
Matsumoto, T
Kumazawa, T
Yoshii, K
Citation: Y. Ohtubo et al., Optical recordings of taste responses from fungiform papillae of mouse in situ, J PHYSL LON, 530(2), 2001, pp. 287-293
Authors:
Jung, MH
Yoshino, T
Kawasaki, S
Pietrus, T
Bando, Y
Suemitsu, T
Sera, M
Takabatake, T
Citation: Mh. Jung et al., Thermoelectric and transport properties of CeBiPt and LaBiPt, J APPL PHYS, 89(11), 2001, pp. 7631-7633
Authors:
Shigekawa, N
Shiojima, K
Suemitsu, T
Citation: N. Shigekawa et al., Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors, APPL PHYS L, 79(8), 2001, pp. 1196-1198
Authors:
Shiojima, K
Suemitsu, T
Ogura, M
Citation: K. Shiojima et al., Correlation between current-voltage characteristics and dislocations for n-GaN Schottky contacts, APPL PHYS L, 78(23), 2001, pp. 3636-3638
Authors:
Bando, Y
Suemitsu, T
Takagi, K
Tokushima, H
Echizen, Y
Katoh, K
Umeo, K
Maeda, Y
Takabatake, T
Citation: Y. Bando et al., Large thermoelectric power in several metallic compounds of cerium and uranium, J ALLOY COM, 313, 2000, pp. 1-6
Authors:
Salamakha, P
Sologub, O
Suemitsu, T
Takabatake, T
Citation: P. Salamakha et al., Crystal structure of ternary CeRhX compounds, X = As, Sb, Bi, J ALLOY COM, 313, 2000, pp. L5-L9
Authors:
Suemitsu, T
Motojima, S
Citation: T. Suemitsu et S. Motojima, Formation of C/SiC multilayer coating on Si-Ti-C-O fiber, MAT SCI E B, 78(2-3), 2000, pp. 119-124
Authors:
Shiojima, K
Shigekawa, N
Suemitsu, T
Citation: K. Shiojima et al., Improved carrier confinement by a buried p-layer in the AlGaN/GaN HEMT structure, IEICE TR EL, E83C(12), 2000, pp. 1968-1970
Authors:
Meneghesso, G
Luise, R
Buttari, D
Chini, A
Yokoyama, H
Suemitsu, T
Zanoni, E
Citation: G. Meneghesso et al., Parasitic effects and long term stability of InP-based HEMTs, MICROEL REL, 40(8-10), 2000, pp. 1715-1720
Authors:
Suemitsu, T
Nishio, K
Motojima, S
Citation: T. Suemitsu et al., Chemical vapor deposition of pyrolytic carbon films on Si-Ti-C-O ceramic fibers, J JPN METAL, 64(9), 2000, pp. 781-786
Authors:
Ogishi, H
Suemitsu, T
Takashima, A
Ono, H
Ukai, H
Kihara, S
Citation: H. Ogishi et al., Evaluation of corrosion resistant of amorphous Fe-Ni-Cr-Ta alloys in hot concentrated sulfuric acid solution, J JPN METAL, 64(5), 2000, pp. 367-370
Authors:
Xu, D
Suemitsu, T
Osaka, J
Umeda, Y
Yamane, Y
Ishii, Y
Ishii, T
Tamamura, T
Citation: D. Xu et al., Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: An electrochemical fabrication technology, IEEE DEVICE, 47(1), 2000, pp. 33-43
Authors:
Tanaka, N
Daishido, T
Takeuchi, H
Akamine, Y
Kuniyoshi, M
Suemitsu, T
Fujii, F
Gotoh, K
Suzuki, T
Mizuki, S
Mizuno, K
Fukuoka, K
Suzuki, M
Citation: N. Tanaka et al., Radix-4 butterfly LSI in direct-imaging Waseda radio interferometer for a pulsar survey, PUB AST S J, 52(3), 2000, pp. 447-455
Authors:
Takeuchi, H
Akamine, Y
Fujii, F
Kuniyoshi, M
Suemitsu, T
Gotoh, K
Mizuki, S
Mizuno, K
Suzuki, T
Fukuoka, K
Tanaka, N
Daishido, T
Citation: H. Takeuchi et al., The minimum spanning tree problem in the phase calibration for the spatialFFT interferometer, PUB AST S J, 52(2), 2000, pp. 267-273
Authors:
Suemitsu, T
Yokoyama, H
Umeda, Y
Enoki, T
Ishii, Y
Citation: T. Suemitsu et al., Highly stable device characteristics of InP-based enhancement-mode high electron mobility transistors with two-step-recessed gates, JPN J A P 1, 38(2B), 1999, pp. 1174-1177
Authors:
Xu, D
Enoki, T
Suemitsu, T
Ishii, Y
Citation: D. Xu et al., High-resolution scanning electron microscopy observation of electrochemical etching in the formation of gate grooves for InP-based modulation-doped field-effect transistors, JPN J A P 1, 38(2B), 1999, pp. 1182-1185
Authors:
Shigekawa, N
Furuta, T
Suemitsu, T
Umeda, Y
Citation: N. Shigekawa et al., Optical characterization of impact ionization in flip-chip-bonded InP-based high electron mobility transistors, JPN J A P 1, 38(10), 1999, pp. 5823-5828
Authors:
Suemitsu, T
Ishii, T
Yokoyama, H
Enoki, T
Ishii, Y
Tamamura, T
Citation: T. Suemitsu et al., 30-nm-gate InP-based lattice-matched high electron mobility transistors with 350 GHz cutoff frequency, JPN J A P 2, 38(2B), 1999, pp. L154-L156
Authors:
Abe, T
Komiyama, T
Suemitsu, T
Citation: T. Abe et al., Radiation exposure limits for Japanese astronauts, MUT RES-F M, 430(2), 1999, pp. 177-181
Authors:
Shigekawa, N
Furuta, T
Suemitsu, T
Umeda, Y
Citation: N. Shigekawa et al., Impact-ionization-induced noise in InGaAs-based 0.1-mu m-gate HEMTs, PHYSICA B, 272(1-4), 1999, pp. 562-564
Authors:
Umeda, Y
Enoki, T
Otsuji, T
Suemitsu, T
Yokoyama, H
Ishii, Y
Citation: Y. Umeda et al., Ultrahigh-speed IC technologies using InP-based HEMTs for future optical communication systems, IEICE TR EL, E82C(3), 1999, pp. 409-418
Authors:
Nishio, K
Igashira, KI
Take, K
Suemitsu, T
Citation: K. Nishio et al., Development of a combustor liner composed of ceramic matrix composite (CMC), J ENG GAS T, 121(1), 1999, pp. 12-17