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Results: 1-8 |
Results: 8
Human acrocentric chromosomes with transcriptionally silent nucleolar organizer regions associate with nucleoli
Authors: Sullivan, GJ Bridger, JM Cuthbert, AP Newbold, RF Bickmore, WA McStay, B
Citation: Gj. Sullivan et al., Human acrocentric chromosomes with transcriptionally silent nucleolar organizer regions associate with nucleoli, EMBO J, 20(11), 2001, pp. 2867-2877
Herb's bipolar transistors
Authors: Brar, B Sullivan, GJ Asbeck, PM
Citation: B. Brar et al., Herb's bipolar transistors, IEEE DEVICE, 48(11), 2001, pp. 2473-2476
Trap characterization by gate-drain conductance and capacitance dispersionstudies of an AlGaN/GaN heterostructure field-effect transistor
Authors: Miller, EJ Dang, XZ Wieder, HH Asbeck, PM Yu, ET Sullivan, GJ Redwing, JM
Citation: Ej. Miller et al., Trap characterization by gate-drain conductance and capacitance dispersionstudies of an AlGaN/GaN heterostructure field-effect transistor, J APPL PHYS, 87(11), 2000, pp. 8070-8073
Transient characteristics of AlxGa1-xN/GaN heterojunction field-effect transistors
Authors: Li, JZ Lin, JY Jiang, HX Sullivan, GJ
Citation: Jz. Li et al., Transient characteristics of AlxGa1-xN/GaN heterojunction field-effect transistors, APPL PHYS L, 77(24), 2000, pp. 4046-4048
Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy
Authors: Bell, LD Smith, RP McDermott, BT Gertner, ER Pittman, R Pierson, RL Sullivan, GJ
Citation: Ld. Bell et al., Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy, APPL PHYS L, 76(13), 2000, pp. 1725-1727
Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures
Authors: Yu, ET Dang, XZ Asbeck, PM Lau, SS Sullivan, GJ
Citation: Et. Yu et al., Spontaneous and piezoelectric polarization effects in III-V nitride heterostructures, J VAC SCI B, 17(4), 1999, pp. 1742-1749
Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor
Authors: Dang, XZ Asbeck, PM Yu, ET Sullivan, GJ Chen, MY McDermott, BT Boutros, KS Redwing, JM
Citation: Xz. Dang et al., Measurement of drift mobility in AlGaN GaN heterostructure field-effect transistor, APPL PHYS L, 74(25), 1999, pp. 3890-3892
Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization
Authors: Qiao, D Guan, ZF Carlton, J Lau, SS Sullivan, GJ
Citation: D. Qiao et al., Low resistance ohmic contacts on AlGaN/GaN structures using implantation and the "advancing" Al/Ti metallization, APPL PHYS L, 74(18), 1999, pp. 2652-2654
Risultati: 1-8 |