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Results: 4
BaTiO3 as an insulating layer for InP-based metal-insulator-semiconductor structures
Authors:
Sumathi, RR Giridharan, NV Jayavel, R Kumar, J
Citation:
Rr. Sumathi et al., BaTiO3 as an insulating layer for InP-based metal-insulator-semiconductor structures, MATER LETT, 51(1), 2001, pp. 56-60
Investigations on the CdS passivated anodic oxide-InP interface for MOS structures
Authors:
Sumathi, RR Kumar, MS Dharmarasu, N Kumar, J
Citation:
Rr. Sumathi et al., Investigations on the CdS passivated anodic oxide-InP interface for MOS structures, MAT SCI E B, 60(1), 1999, pp. 25-30
Deep level transient spectroscopic analysis on Au/SiO2/InP MOS structures
Authors:
Sumathi, RR Kumar, MS Kumar, J
Citation:
Rr. Sumathi et al., Deep level transient spectroscopic analysis on Au/SiO2/InP MOS structures, PHYS ST S-A, 175(2), 1999, pp. 591-596
Improved electrical properties on the anodic oxide InP interface for MOS structures
Authors:
Sumathi, RR Dharmarasu, N Arulkumaran, S Jayavel, P Kumar, J
Citation:
Rr. Sumathi et al., Improved electrical properties on the anodic oxide InP interface for MOS structures, J ELEC MAT, 27(12), 1998, pp. 1358-1361
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