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Results: 1-25 | 26-45 |
Results: 26-45/45
Solution thermodynamics of some organic solutes in supported liquid film of dibenzo-18-crown-6
Authors: Sun, DZ Chen, J Lu, WM Zheng, XM
Citation: Dz. Sun et al., Solution thermodynamics of some organic solutes in supported liquid film of dibenzo-18-crown-6, I J CHEM A, 38(11), 1999, pp. 1195-1199
Host-guest complex of beta-cyclodextrin and dimethyl yellow in aqueous system - A spectrophotometric study on solubilization of dimethyl yellow in dilute aqueous solution of beta-cyclodextrin
Authors: Sun, DZ Chen, J Lu, WM Zheng, XM
Citation: Dz. Sun et al., Host-guest complex of beta-cyclodextrin and dimethyl yellow in aqueous system - A spectrophotometric study on solubilization of dimethyl yellow in dilute aqueous solution of beta-cyclodextrin, I J CHEM A, 38(1), 1999, pp. 73-76
Hydrogen contaminant and its correlation with background electrons in GaN
Authors: Zhang, JP Sun, DZ Wang, XL Kong, MY Zeng, YP Li, JM Lin, LY
Citation: Jp. Zhang et al., Hydrogen contaminant and its correlation with background electrons in GaN, SEMIC SCI T, 14(5), 1999, pp. 403-405
Hair concentrations of calcium, iron, and zinc in pregnant women and effects of supplementation
Authors: Leung, PL Huang, HM Sun, DZ Zhu, MG
Citation: Pl. Leung et al., Hair concentrations of calcium, iron, and zinc in pregnant women and effects of supplementation, BIOL TR EL, 69(3), 1999, pp. 269-282
Hair and serum calcium, iron, copper, and zinc levels during normal pregnancy at three trimesters
Authors: Huang, HM Leung, PL Sun, DZ Zhu, MG
Citation: Hm. Huang et al., Hair and serum calcium, iron, copper, and zinc levels during normal pregnancy at three trimesters, BIOL TR EL, 69(2), 1999, pp. 111-120
Energy bands and acceptor binding energies of GaN
Authors: Xia, JB Cheah, KW Wang, XL Sun, DZ Kong, MY
Citation: Jb. Xia et al., Energy bands and acceptor binding energies of GaN, PHYS REV B, 59(15), 1999, pp. 10119-10124
Load-carrying capacity and crack resistance of a cladding by the Sigma-oscillating wire technique
Authors: Schmitt, W Keim, E Sun, DZ Blauel, JG Nagel, G
Citation: W. Schmitt et al., Load-carrying capacity and crack resistance of a cladding by the Sigma-oscillating wire technique, NUCL ENG DE, 190(1-2), 1999, pp. 149-158
Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)
Authors: Liu, JP Wang, JZ Huang, DD Li, JP Sun, DZ Kong, MY
Citation: Jp. Liu et al., Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100), J CRYST GR, 207(1-2), 1999, pp. 150-153
Electrical properties of GaN deposited on nitridated sapphire by molecularbeam epitaxy using NH3 cracked on the growing surface
Authors: Zhang, JP Sun, DZ Li, XB Wang, XL Kong, MY Zeng, YP Li, JM Lin, LY
Citation: Jp. Zhang et al., Electrical properties of GaN deposited on nitridated sapphire by molecularbeam epitaxy using NH3 cracked on the growing surface, J CRYST GR, 202, 1999, pp. 429-432
Influence of crystal perfection on the reverse leakage current of the SiGeSi p-n heterojunction diodes
Authors: Liu, XF Liu, JP Li, JP Wang, YT Li, LY Sun, DZ Kong, MY Lin, LY
Citation: Xf. Liu et al., Influence of crystal perfection on the reverse leakage current of the SiGeSi p-n heterojunction diodes, J CRYST GR, 202, 1999, pp. 551-555
Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing
Authors: Liu, JP Kong, MY Liu, XF Li, JP Huang, DD Li, LX Sun, DZ
Citation: Jp. Liu et al., Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing, J CRYST GR, 202, 1999, pp. 556-559
High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)
Authors: Liu, JP Huang, DD Li, JP Sun, DZ Kong, MY
Citation: Jp. Liu et al., High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE), J CRYST GR, 200(3-4), 1999, pp. 613-616
Evolution of height distribution of Ge islands on Si(1 0 0)
Authors: Liu, JP Gong, Q Huang, DD Li, JP Sun, DZ Kong, MY
Citation: Jp. Liu et al., Evolution of height distribution of Ge islands on Si(1 0 0), J CRYST GR, 200(3-4), 1999, pp. 617-620
p-type co-doping study of GaN by photoluminescence
Authors: Zhang, JP Sun, DZ Wang, XL Kong, MY Zeng, YP Li, JM Lin, LY
Citation: Jp. Zhang et al., p-type co-doping study of GaN by photoluminescence, J CRYST GR, 197(1-2), 1999, pp. 368-371
Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGexgrowth by disilane and solid-Ge molecular beam epitaxy
Authors: Liu, JP Huang, DD Li, JP Lin, YX Sun, DZ Kong, MY
Citation: Jp. Liu et al., Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGexgrowth by disilane and solid-Ge molecular beam epitaxy, J APPL PHYS, 85(9), 1999, pp. 6920-6922
Solubilization of benzene and several benzene derivatives in dilute aqueous solution of 18-crown-6
Authors: Sun, DZ Chen, J Lu, WM Zheng, XM
Citation: Dz. Sun et al., Solubilization of benzene and several benzene derivatives in dilute aqueous solution of 18-crown-6, J SOL CHEM, 27(12), 1998, pp. 1097-1107
Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001)
Authors: Zou, LF Acosta-Ortiz, SE Zou, LX Regalado, LE Sun, DZ Wang, ZG
Citation: Lf. Zou et al., Boron diffusion in Ge+ premorphized and BF2+ implanted Si(001), REV MEX FIS, 44, 1998, pp. 85-88
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
Authors: Zou, LF Acosta-Ortiz, SE Zou, LX Regalado, LE Sun, DZ Wang, ZG
Citation: Lf. Zou et al., Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials, REV MEX FIS, 44, 1998, pp. 93-96
Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters
Authors: Liu, JP Kong, MY Si, JJ Huang, DD Li, JP Sun, DZ
Citation: Jp. Liu et al., Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters, J PHYS D, 31(23), 1998, pp. L85-L87
Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature
Authors: Liu, JP Kong, MY Huang, DD Li, JP Sun, DZ
Citation: Jp. Liu et al., Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature, J CRYST GR, 194(3-4), 1998, pp. 426-429
Risultati: 1-25 | 26-45 |