Authors:
Mamor, M
Ouacha, H
Willander, M
Auret, FD
Goodman, SA
Ouacha, A
Sveinbjornsson, E
Citation: M. Mamor et al., High-energy He-ion irradiation-induced defects and their influence on the noise behavior of Pd/n-Si1-xGex Schottky junctions, APPL PHYS L, 76(25), 2000, pp. 3750-3752
Citation: T. Rudenko et al., A simple method for the evaluation of the recombination parameters in SiC MOS structures, MICROEL ENG, 48(1-4), 1999, pp. 273-276