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Results: 1-14 |
Results: 14
Influence of leakage and gain-cavity alignment on the performance of Al(GaInP) visible vertical-cavity surface emitting lasers
Authors: Knowles, G Sweeney, SJ Sale, T
Citation: G. Knowles et al., Influence of leakage and gain-cavity alignment on the performance of Al(GaInP) visible vertical-cavity surface emitting lasers, IEE P-OPTO, 148(1), 2001, pp. 55-59
Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures
Authors: Sweeney, SJ Knowles, G Sale, TE Adams, AR
Citation: Sj. Sweeney et al., Quantifying the effect of indirect carrier leakage on visible Al(GaInP) lasers using high pressures and low temperatures, PHYS ST S-B, 223(2), 2001, pp. 567-572
Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature
Authors: Sweeney, SJ Higashi, T Andreev, A Adams, AR Uchida, T Fujii, T
Citation: Sj. Sweeney et al., Superior temperature performance of 1.3 mu m AlGaInAs-Based semiconductor lasers investigated at high pressure and low temperature, PHYS ST S-B, 223(2), 2001, pp. 573-579
Assessing the performance of visible (665 nm) vertical cavity surface emitting lasers using high pressure and low temperature techniques
Authors: Knowles, G Sweeney, SJ Sale, TE Adams, AR
Citation: G. Knowles et al., Assessing the performance of visible (665 nm) vertical cavity surface emitting lasers using high pressure and low temperature techniques, PHYS ST S-B, 223(2), 2001, pp. 581-585
Gain-cavity alignment in efficient visible (660 nm) VCSELs studied using high pressure techniques
Authors: Sale, TE Sweeney, SJ Knowles, G Adams, AR
Citation: Te. Sale et al., Gain-cavity alignment in efficient visible (660 nm) VCSELs studied using high pressure techniques, PHYS ST S-B, 223(2), 2001, pp. 587-591
Cloning, sequencing, and expression of interferon-gamma from elk in North America
Authors: Sweeney, SJ Emerson, C Eriks, IS
Citation: Sj. Sweeney et al., Cloning, sequencing, and expression of interferon-gamma from elk in North America, J WILDL DIS, 37(1), 2001, pp. 164-171
Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure
Authors: Fehse, R Sweeney, SJ Adams, AR O'Reilly, EP Egorov, AY Riechert, H Illek, S
Citation: R. Fehse et al., Insights into carrier recombination processes in 1.3 mu m GaInNAs-based semiconductor lasers attained using high pressure, ELECTR LETT, 37(2), 2001, pp. 92-93
Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques
Authors: Sweeney, SJ Knowles, G Sale, TE
Citation: Sj. Sweeney et al., Evaluating the continuous-wave performance of AlGaInP-based red (667 nm) vertical-cavity surface-emitting lasers using low-temperature and high-pressure techniques, APPL PHYS L, 78(7), 2001, pp. 865-867
A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure
Authors: Sweeney, SJ Higashi, T Adams, AR Uchida, T Fujii, T
Citation: Sj. Sweeney et al., A comparison of AlGaInAs and InGaAsP-based 1.3 mu m semiconductor lasers using high pressure, HIGH PR RES, 18(1-6), 2000, pp. 49-55
The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers
Authors: Phillips, AF Sweeney, SJ Adams, AR Thijs, PJA
Citation: Af. Phillips et al., The temperature dependence of 1.3-and 1.5-mu m compressively strained InGaAs(P) MQW semiconductor lasers, IEEE S T QU, 5(3), 1999, pp. 401-412
Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers
Authors: Higashi, T Sweeney, SJ Phillips, AF Adams, AR O'Reilly, EP Uchida, T Fujii, T
Citation: T. Higashi et al., Experimental analysis of temperature dependence in 1.3-mu m AlGaInAs-InP strained MQW lasers, IEEE S T QU, 5(3), 1999, pp. 413-419
Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers
Authors: Higashi, T Sweeney, SJ Phillips, AF Adams, AR O'Reilly, EP Uchida, T Fujii, T
Citation: T. Higashi et al., Observation of reduced nonradiative current in 1.3-mu m AlGaInAs-InP strained MQW lasers, IEEE PHOTON, 11(4), 1999, pp. 409-411
The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers
Authors: Phillips, AF Sweeney, SJ Adams, AR Thijs, PJA
Citation: Af. Phillips et al., The hydrostatic pressure dependence of the threshold current in 1.3 mu m InGaAsP quantum well semiconductor diode lasers, PHYS ST S-B, 211(1), 1999, pp. 513-518
Dependence of threshold current on QW position and on pressure in 1.5 mu mInGaAs(P) lasers
Authors: Sweeney, SJ Adams, AR Silver, M O'Reilly, EP Watling, JR Walker, AB Thijs, PJA
Citation: Sj. Sweeney et al., Dependence of threshold current on QW position and on pressure in 1.5 mu mInGaAs(P) lasers, PHYS ST S-B, 211(1), 1999, pp. 525-531
Risultati: 1-14 |