Authors: TAI GC KORMAN CE MAYERGOYZ ID

Citation: Gc. Tai et al., SIMULATION OF THE LOGIC SWITCHING CHARACTERISTICS OF HOT-CARRIER-DEGRADED ULTRA-THIN SOI CMOS INVERTERS, Solid-state electronics, 39(11), 1996, pp. 1669-1674

Authors: TAI GC KORMAN CE MAYERGOYZ ID

Citation: Gc. Tai et al., SIMULATION OF THE LOGIC SWITCHING CHARACTERISTICS OF HOT-CARRIER-DEGRADED ULTRA-THIN SOI CMOS INVERTERS, Solid-state electronics, 39(10), 1996, pp. 1526-1528

Authors: TAI GC KORMAN CE MAYERGOYZ ID

Citation: Gc. Tai et al., A PARALLEL-IN-TIME METHOD FOR THE TRANSIENT SIMULATION OF SOI DEVICESWITH DRAIN CURRENT OVERSHOOTS, IEEE transactions on computer-aided design of integrated circuits and systems, 13(8), 1994, pp. 1035-1044

Authors: TAI GC KORMAN CE MAYERGOYZ ID

Citation: Gc. Tai et al., SIMULATION OF THE TRANSIENT CHARACTERISTICS OF PARTIALLY-DEPLETED ANDFULLY-DEPLETED SOI MOSFETS, Solid-state electronics, 37(7), 1994, pp. 1387-1394

Authors: LIN Q GOLDSMAN N TAI GC

Citation: Q. Lin et al., HIGHLY STABLE AND ROUTINELY CONVERGENT 2-DIMENSIONAL HYDRODYNAMIC DEVICE SIMULATION, Solid-state electronics, 37(2), 1994, pp. 359-371