SIMULATION OF THE LOGIC SWITCHING CHARACTERISTICS OF HOT-CARRIER-DEGRADED ULTRA-THIN SOI CMOS INVERTERS

Authors
TAI GC KORMAN CE MAYERGOYZ ID
Citation
Gc. Tai et al., SIMULATION OF THE LOGIC SWITCHING CHARACTERISTICS OF HOT-CARRIER-DEGRADED ULTRA-THIN SOI CMOS INVERTERS, Solid-state electronics, 39(10), 1996, pp. 1526-1528
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
10
Year of publication
1996
Pages
1526 - 1528
Database
ISI
SICI code
0038-1101(1996)39:10<1526:SOTLSC>2.0.ZU;2-E