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Results:
1-14
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Results: 14
Authors:
PRATT AR
TAKAMORI T
KAMIJOH T
Citation: Ar. Pratt et al., THERMAL QUENCHING OF THE PHOTOLUMINESCENCE OF INGAAS GAAS SINGLE QUANTUM-WELLS ADJACENT TO A SELECTIVELY OXIDIZED ALAS LAYER/, JPN J A P 2, 37(3A), 1998, pp. 275-277
Authors:
PRATT AR
TAKAMORI T
KAMIJOH T
Citation: Ar. Pratt et al., TEMPERATURE-DEPENDENCE OF THE CAVITY-POLARITON MODE SPLITTING IN A SEMICONDUCTOR MICROCAVITY, Physical review. B, Condensed matter, 58(15), 1998, pp. 9656-9658
Authors:
HATTORI M
TADOKORO S
TAKAMORI T
Citation: M. Hattori et al., ROBUST STABILIZATION OF FLEXIBLE STRUCTURES USING STATIC OUTPUT-FEEDBACK, Nonlinear analysis, 30(4), 1997, pp. 2215-2220
Authors:
TADOKORO S
MURAKAMI T
FUJI S
KANNO R
HATTORI M
TAKAMORI T
OGURO K
Citation: S. Tadokoro et al., AN ELLIPTIC FRICTION DRIVE ELEMENT USING AN ICPF ACTUATOR, Control systems magazine, 17(3), 1997, pp. 60-68
Authors:
TAKAMORI T
TAKEMASA K
KAMIJOH T
Citation: T. Takamori et al., COMPOSITIONAL ABRUPTNESS OF WET-OXIDIZED ALAS GAAS INTERFACE/, Applied surface science, 117, 1997, pp. 705-709
Authors:
TAKAMORI T
WADA H
KAMIJOH T
Citation: T. Takamori et al., GAAS SIDE-BY-SIDE DIRECT WAFER BONDING AND FORMATION OF LATERAL PN JUNCTION, Applied surface science, 117, 1997, pp. 798-807
Authors:
KURIYAMA K
KAZAMA K
KOYAMA T
TAKAMORI T
KAMIJOH T
Citation: K. Kuriyama et al., PHOTOQUENCHING OF THE HOPPING CONDUCTION IN ARSENIC-ION-IMPLANTED MBEGROWN GAAS, Solid state communications, 103(3), 1997, pp. 145-149
Authors:
PRATT AR
TAKAMORI T
KAMIJOH I
Citation: Ar. Pratt et al., PHOTOLUMINESCENCE OF INGAAS GAAS SINGLE-QUANTUM-WELL ADJACENT TO A SELECTIVELY OXIDIZED ALAS LAYER/, Applied physics letters, 71(10), 1997, pp. 1394-1396
Authors:
XU CQ
TAKEMASA K
NAKAMURA K
WADA H
TAKAMORI T
OKAYAMA H
KAMIJOH T
Citation: Cq. Xu et al., CONFIRMATION OF ALGAAS CRYSTAL DOMAIN INVERSION USING ASYMMETRIC WET ETCHING AND OPTICAL 2ND-HARMONIC GENERATION METHODS, JPN J A P 2, 35(11A), 1996, pp. 1419-1421
Authors:
WADA H
TAKAMORI T
KAMIJOH T
Citation: H. Wada et al., ROOM-TEMPERATURE PHOTOPUMPED OPERATION OF 1.58-MU-M VERTICAL-CAVITY LASERS FABRICATED ON SI SUBSTRATES USING WAFER BONDING, IEEE photonics technology letters, 8(11), 1996, pp. 1426-1428
Authors:
TAKAMORI T
TAKEMASA K
KAMIJOH T
Citation: T. Takamori et al., INTERFACE STRUCTURE OF SELECTIVELY OXIDIZED ALAS GAAS/, Applied physics letters, 69(5), 1996, pp. 659-661
Authors:
TAKAMORI T
KAMIJOH T
Citation: T. Takamori et T. Kamijoh, ELECTRICAL-PROPERTIES OF LATERAL NPN JUNCTIONS USING MOLECULAR-BEAM EPITAXY-GROWN SI-DOPED GAAS ON PATTERNED SUBSTRATES, Journal of crystal growth, 150(1-4), 1995, pp. 383-387
Authors:
TAKAMORI T
KAMIJOH T
Citation: T. Takamori et T. Kamijoh, LATERAL JUNCTIONS OF MOLECULAR-BEAM EPITAXIAL GROWN SI-DOPED GAAS ANDALGAAS ON PATTERNED SUBSTRATES, Journal of applied physics, 77(1), 1995, pp. 187-191
Authors:
TAKAMORI T
WATANABE K
KAMIJOH T
Citation: T. Takamori et al., LATERAL NPN JUNCTION AND SEMIINSULATING GAAS CURRENT CONFINEMENT STRUCTURE FOR INDEX-GUIDED INGAAS ALGAAS LASERS BY MOLECULAR-BEAM EPITAXY/, IEEE journal of quantum electronics, 29(6), 1993, pp. 2074-2080
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1-14
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