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KARASAWA T
OHKI Y
NISHIKAWA H
TAKIYAMA M
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SEOL KS
OHKI Y
NISHIKAWA H
TAKIYAMA M
HAMA Y
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Authors:
ISHII K
ISSHIKI D
OHKI Y
NISHIKAWA H
TAKIYAMA M
Citation: K. Ishii et al., ROLE OF POINT-DEFECTS IN DIELECTRIC-BREAKDOWN OF SIO2 FORMED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF TETRAETHOXYSILANE, JPN J A P 1, 34(1), 1995, pp. 205-211
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NISHIKAWA H
WATANABE E
ITO D
TAKIYAMA M
LEKI A
OHKI Y
Citation: H. Nishikawa et al., PHOTOLUMINESCENCE STUDY OF DEFECTS IN ION-IMPLANTED THERMAL SIO2-FILMS, Journal of applied physics, 78(2), 1995, pp. 842-846
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