AAAAAA

   
Results: 1-10 |
Results: 10
HIGH-POWER GAINP-ALGAINP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: TAPPURA K AARIK J PESSA M
Citation: K. Tappura et al., HIGH-POWER GAINP-ALGAINP QUANTUM-WELL LASERS GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY, IEEE photonics technology letters, 8(3), 1996, pp. 319-321
DONOR LEVELS AND THE MICROSCOPIC STRUCTURE OF THE DX CENTER IN N-TYPESI-DOPED ALXGA0.51-IN0.49P GROWN BY MOLECULAR-BEAM EPITAXY
Authors: MAKINEN J LAINE T PARTANEN J SAARINEN K HAUTOJARVI P TAPPURA K HAKKARAINEN T ASONEN H PESSA M KAUPPINEN JP VANTTINEN K PAALANEN MA LIKONEN J
Citation: J. Makinen et al., DONOR LEVELS AND THE MICROSCOPIC STRUCTURE OF THE DX CENTER IN N-TYPESI-DOPED ALXGA0.51-IN0.49P GROWN BY MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 53(12), 1996, pp. 7851-7862
GAINASP GAS-SOURCE MBE TECHNOLOGY
Authors: PESSA M TAPPURA K OVTCHINNIKOV A
Citation: M. Pessa et al., GAINASP GAS-SOURCE MBE TECHNOLOGY, Thin solid films, 267(1-2), 1995, pp. 99-105
HIGH INTERFACE RECOMBINATION VELOCITY CAUSED BY SPATIALLY INDIRECT QUANTUM-WELL TRANSITION IN AL0.55IN0.45AS INP HETEROFACE SOLAR-CELLS/
Authors: LAMMASNIEMI J TAPPURA K SMEKALIN K
Citation: J. Lammasniemi et al., HIGH INTERFACE RECOMBINATION VELOCITY CAUSED BY SPATIALLY INDIRECT QUANTUM-WELL TRANSITION IN AL0.55IN0.45AS INP HETEROFACE SOLAR-CELLS/, Journal of applied physics, 77(9), 1995, pp. 4801-4803
LARGE-AREA GAINASP SOLAR-CELLS GROWN BY GAS-SOURCE MBE ON GAAS SUBSTRATES
Authors: SMEKALIN K TAPPURA K LAMMASNIEMI J
Citation: K. Smekalin et al., LARGE-AREA GAINASP SOLAR-CELLS GROWN BY GAS-SOURCE MBE ON GAAS SUBSTRATES, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1700-1703
LARGE-AREA GAINASP AND GAINP SOLAR-CELLS FOR SPACE APPLICATIONS
Authors: SMEKALIN K TAPPURA K LAMMASNIEMI J
Citation: K. Smekalin et al., LARGE-AREA GAINASP AND GAINP SOLAR-CELLS FOR SPACE APPLICATIONS, Physica scripta. T, 54, 1994, pp. 172-174
DETERMINATION OF HETEROJUNCTION BAND DISCONTINUITIES IN STRAINED ALXIN1-XP INP SYSTEMS/
Authors: LAMMASNIEMI J TAPPURA K SMEKALIN K
Citation: J. Lammasniemi et al., DETERMINATION OF HETEROJUNCTION BAND DISCONTINUITIES IN STRAINED ALXIN1-XP INP SYSTEMS/, Applied physics letters, 65(20), 1994, pp. 2574-2575
UNSTABLE REGIONS IN THE GROWTH OF GAINASP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: TAPPURA K LAURILA J
Citation: K. Tappura et J. Laurila, UNSTABLE REGIONS IN THE GROWTH OF GAINASP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 309-315
GROWTH OF GA0.29IN0.71AS0.61P0.39 (LAMBDA-APPROXIMATE-TO-1.3 MU-M) ONINP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: TAPPURA K ASONEN H
Citation: K. Tappura et H. Asonen, GROWTH OF GA0.29IN0.71AS0.61P0.39 (LAMBDA-APPROXIMATE-TO-1.3 MU-M) ONINP BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 217-220
ELECTRICAL AND OPTICAL-PROPERTIES OF GAINASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: TAPPURA K
Citation: K. Tappura, ELECTRICAL AND OPTICAL-PROPERTIES OF GAINASP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(7), 1993, pp. 4565-4570
Risultati: 1-10 |