Authors:
KUMAGAI Y
ISHIMOTO K
MORI R
TEE KM
ISHIBASHI T
KAWABE M
HASEGAWA F
Citation: Y. Kumagai et al., 4-MONOLAYER-HEIGHT LAYER-BY-LAYER GROWTH AND INCREASE OF THE CRITICALTHICKNESS OF GE HETEROEPITAXY ON BORON-PREADSORBED SI(111) SURFACE, JPN J A P 2, 35(4B), 1996, pp. 476-478