Authors: KUMAGAI Y ISHIMOTO K MORI R TEE KM ISHIBASHI T KAWABE M HASEGAWA F

Citation: Y. Kumagai et al., 4-MONOLAYER-HEIGHT LAYER-BY-LAYER GROWTH AND INCREASE OF THE CRITICALTHICKNESS OF GE HETEROEPITAXY ON BORON-PREADSORBED SI(111) SURFACE, JPN J A P 2, 35(4B), 1996, pp. 476-478