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Results: 1-10 |
Results: 10
SINGLE-ELECTRON-TUNNELING SPECTROSCOPY OF ASYMMETRIC LATERALLY CONFINED DOUBLE-BARRIER HETEROSTRUCTURES
Authors: SCHMIDT T TEWORDT M HAUG RJ VONKLITZING K FORSTER A LUTH H
Citation: T. Schmidt et al., SINGLE-ELECTRON-TUNNELING SPECTROSCOPY OF ASYMMETRIC LATERALLY CONFINED DOUBLE-BARRIER HETEROSTRUCTURES, Solid-state electronics, 40(1-8), 1996, pp. 15-19
PEAK-TO-VALLEY RATIO OF SMALL RESONANT-TUNNELING DIODES WITH VARIOUS BARRIER-THICKNESS ASYMMETRIES
Authors: SCHMIDT T TEWORDT M HAUG RJ VONKLITZING K SCHONHERR B GRAMBOW P FORSTER A LUTH H
Citation: T. Schmidt et al., PEAK-TO-VALLEY RATIO OF SMALL RESONANT-TUNNELING DIODES WITH VARIOUS BARRIER-THICKNESS ASYMMETRIES, Applied physics letters, 68(6), 1996, pp. 838-840
QUANTUM-DOT GROUND-STATES IN A MAGNETIC-FIELD STUDIED BY SINGLE-ELECTRON TUNNELING SPECTROSCOPY ON DOUBLE-BARRIER HETEROSTRUCTURES (VOL 51,PG 5570, 1995)
Authors: SCHMIDT T TEWORDT M BLICK RH HAUG RJ PFANNKUCHE D VONKLITZING K FORSTER A LUTH H
Citation: T. Schmidt et al., QUANTUM-DOT GROUND-STATES IN A MAGNETIC-FIELD STUDIED BY SINGLE-ELECTRON TUNNELING SPECTROSCOPY ON DOUBLE-BARRIER HETEROSTRUCTURES (VOL 51,PG 5570, 1995), Physical review. B, Condensed matter, 52(15), 1995, pp. 11520-11520
QUANTUM-DOT GROUND-STATES IN A MAGNETIC-FIELD STUDIED BY SINGLE-ELECTRON TUNNELING SPECTROSCOPY ON DOUBLE-BARRIER HETEROSTRUCTURES
Authors: SCHMIDT T TEWORDT M BLICK RH HAUG RJ PFANNKUCHE D VONKLITZING K FORSTER A LUTH H
Citation: T. Schmidt et al., QUANTUM-DOT GROUND-STATES IN A MAGNETIC-FIELD STUDIED BY SINGLE-ELECTRON TUNNELING SPECTROSCOPY ON DOUBLE-BARRIER HETEROSTRUCTURES, Physical review. B, Condensed matter, 51(8), 1995, pp. 5570-5573
VERTICAL TUNNELING BETWEEN 2 QUANTUM DOTS IN A TRANSVERSE MAGNETIC-FIELD
Authors: TEWORDT M HUGHES RJF MARTINMORENO L NICHOLLS JT ASAHI H KELLY MJ LAW VJ RITCHIE DA FROST JEF JONES GAC PEPPER M
Citation: M. Tewordt et al., VERTICAL TUNNELING BETWEEN 2 QUANTUM DOTS IN A TRANSVERSE MAGNETIC-FIELD, Physical review. B, Condensed matter, 49(12), 1994, pp. 8071-8075
SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES
Authors: TEWORDT M LAW VJ NICHOLLS JT MARTINMORENO L RITCHIE DA KELLY MJ PEPPER M FROST JEF NEWBURY R JONES GA
Citation: M. Tewordt et al., SINGLE-ELECTRON TUNNELING AND COULOMB CHARGING EFFECTS IN ULTRASMALL DOUBLE-BARRIER HETEROSTRUCTURES, Solid-state electronics, 37(4-6), 1994, pp. 793-799
300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2
Authors: LAW VJ TEWORDT M CLARY DC JONES GAC
Citation: Vj. Law et al., 300-KHZ PULSE PLASMA-ETCHING OF GAAS USING A MIXTURE OF CICH3 AND H2, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2262-2265
PLASMA-ETCHING OF GAAS AND ALGAAS USING 300 KHZ AND 13.56 MHZ EXCITATION-FREQUENCY
Authors: LAW VJ TEWORDT M JONES GAC RITCHIE DA
Citation: Vj. Law et al., PLASMA-ETCHING OF GAAS AND ALGAAS USING 300 KHZ AND 13.56 MHZ EXCITATION-FREQUENCY, Semiconductor science and technology, 8(9), 1993, pp. 1775-1778
OPTICAL-EMISSION SPECTROSCOPY OF PLASMA-ETCHING OF GAAS AND INP
Authors: LAW VJ JONES GAC RITCHIE DA TEWORDT M
Citation: Vj. Law et al., OPTICAL-EMISSION SPECTROSCOPY OF PLASMA-ETCHING OF GAAS AND INP, Microelectronic engineering, 21(1-4), 1993, pp. 337-340
REACTIVE ION ETCHING OF GAAS USING CH4 - IN HE, NE AND AR
Authors: LAW VJ INGRAM SG TEWORDT M JONES GAC
Citation: Vj. Law et al., REACTIVE ION ETCHING OF GAAS USING CH4 - IN HE, NE AND AR, Semiconductor science and technology, 6(5), 1991, pp. 411-413
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