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Results:
1-7
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Results: 7
Authors:
PORTNOI EL
GORFINKEL VB
AVRUTIN EA
THAYNE IG
BARROW DA
MARSH JH
LURYI S
Citation: El. Portnoi et al., OPTOELECTRONIC MICROWAVE-RANGE FREQUENCY MIXING IN SEMICONDUCTOR-LASERS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 451-460
Authors:
LAMOND C
AVRUTIN EA
BARROW DA
THAYNE IG
BRYCE AC
MARSH JH
Citation: C. Lamond et al., 2-SECTION SELF-PULSATING LASER-DIODES AND THEIR APPLICATION TO MICROWAVE AND MILLIMETER-WAVE OPTOELECTRONICS, International journal of optoelectronics, 10(6), 1995, pp. 439-442
Authors:
THAYNE IG
JENSEN GU
HOLLAND MC
CHEN YC
LI WG
PAULSEN A
DAVIS JH
BEAUMONT SP
BHATTACHARYA PK
Citation: Ig. Thayne et al., COMPARISON OF 80-200 NM GATE LENGTH AL0.25GAAS GAAS/(GAAS-ALAS), AL0.3GAAS/IN0.15GAAS/GAAS, AND IN0.52ALAS/IN0.65GAAS/INP HEMTS/, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2047-2055
Authors:
PORTNOI EL
GORFINKEL VB
BARROW DA
THAYNE IG
AVRUTIN EA
MARSH JH
Citation: El. Portnoi et al., SEMICONDUCTOR-LASERS AS INTEGRATED OPTOELECTRONIC UP DOWN-CONVERTERS/, Electronics Letters, 31(4), 1995, pp. 289-290
Authors:
THAYNE IG
ELGAID K
TAYLOR MRS
HOLLAND MC
FAIRBAIRN S
CAMERON NI
BEAUMONT SP
BELLE G
Citation: Ig. Thayne et al., LOW-FREQUENCY NOISE OF SELECTIVELY DRY-ETCH GATE-RECESSED GAAS-MESFETS, Electronics Letters, 31(4), 1995, pp. 324-326
Authors:
THAYNE IG
PAULSEN A
BEAUMONT SP
Citation: Ig. Thayne et al., A STUDY OF WET CHEMICAL GATE RECESS ETCHING OF PSEUDOMORPHIC IN0.15GAAS GAAS HEMTS, Semiconductor science and technology, 9(5), 1994, pp. 1143-1147
Authors:
ADAMS JA
THAYNE IG
WILKINSON CDW
BEAUMONT SP
JOHNSON NP
KEAN AH
STANLEY CR
Citation: Ja. Adams et al., SHORT-CHANNEL EFFECTS AND DRAIN-INDUCED BARRIER LOWERING IN NANOMETER-SCALE GAAS-MESFETS, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1047-1052
Risultati:
1-7
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