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Results: 1-10 |
Results: 10
ELECTRON-TUNNELING BETWEEN 2-DIMENSIONAL ELECTRONIC SYSTEMS IN A HETEROSTRUCTURE WITH A SINGLE DOPED BARRIER
Authors: POPOV VG DUBROVSKII YV KHANIN YN VDOVIN EE MAUDE DK PORTAL JC ANDERSSON TG THORDSON J
Citation: Vg. Popov et al., ELECTRON-TUNNELING BETWEEN 2-DIMENSIONAL ELECTRONIC SYSTEMS IN A HETEROSTRUCTURE WITH A SINGLE DOPED BARRIER, Semiconductors, 32(5), 1998, pp. 539-543
DOPANT DELTA-LAYERS IN GAAS AND GAAS ALGAAS QUANTUM STRUCTURES/
Authors: HOLTZ PO SERNELIUS B FERREIRA AC POZINA G MONEMAR B MAURITZ O EKENBERG U THORDSON J ANDERSSON TG
Citation: Po. Holtz et al., DOPANT DELTA-LAYERS IN GAAS AND GAAS ALGAAS QUANTUM STRUCTURES/, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1998, pp. 213-221
A COMPARATIVE-STUDY OF STRAIN RELAXATION EFFECTS ON THE PERFORMANCE OF INGAAS QUANTUM-WELL-BASED HETEROJUNCTION PHOTOTRANSISTORS
Authors: GHISONI M SJOLUND O LARSSON A THORDSON J ANDERSSON T WANG SM HART L
Citation: M. Ghisoni et al., A COMPARATIVE-STUDY OF STRAIN RELAXATION EFFECTS ON THE PERFORMANCE OF INGAAS QUANTUM-WELL-BASED HETEROJUNCTION PHOTOTRANSISTORS, IEEE journal of selected topics in quantum electronics, 3(3), 1997, pp. 768-779
OPTICAL CHARACTERIZATION OF MBE-GROWN GANAS
Authors: POZINA G IVANOV I MONEMAR B THORDSON J ANDERSSON TG
Citation: G. Pozina et al., OPTICAL CHARACTERIZATION OF MBE-GROWN GANAS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 153-156
TRANSPORT-PROPERTIES OF SILICON DELTA-DOPED GAAS IN HIGH ELECTRON-DENSITY REGIME
Authors: BUYANOV AV HOLTZ PO POZINA G MONEMAR B THORDSON J ANDERSSON TG
Citation: Av. Buyanov et al., TRANSPORT-PROPERTIES OF SILICON DELTA-DOPED GAAS IN HIGH ELECTRON-DENSITY REGIME, Acta Physica Polonica. A, 92(4), 1997, pp. 727-732
PARTIALLY RELAXED MULTIQUANTUM-WELL INGAAS ALGAAS HETEROJUNCTION PHOTOTRANSISTOR OPERATING AT 955-970NM/
Authors: SJOLUND O GHISONI M LARSSON A THORDSON J ANDERSSON T
Citation: O. Sjolund et al., PARTIALLY RELAXED MULTIQUANTUM-WELL INGAAS ALGAAS HETEROJUNCTION PHOTOTRANSISTOR OPERATING AT 955-970NM/, Electronics Letters, 31(21), 1995, pp. 1870-1871
GROWTH AND CHARACTERIZATION OF DIGITAL AND COMPOSITIONALLY GRADED ALGAAS GAAS NONRECTANGULAR QUANTUM-WELLS/
Authors: WANG SM ANDERSSON TG CHEN WQ SODERVALL U THORDSON J
Citation: Sm. Wang et al., GROWTH AND CHARACTERIZATION OF DIGITAL AND COMPOSITIONALLY GRADED ALGAAS GAAS NONRECTANGULAR QUANTUM-WELLS/, Journal of crystal growth, 135(3-4), 1994, pp. 455-462
MEDIATION OF STRAIN FROM IN0.36GA0.64AS LAYERS THROUGH GAAS BARRIERS IN MULTIPLE-QUANTUM-WELL STRUCTURES
Authors: EKENSTEDT MJ CHEN WQ ANDERSSON TG THORDSON J
Citation: Mj. Ekenstedt et al., MEDIATION OF STRAIN FROM IN0.36GA0.64AS LAYERS THROUGH GAAS BARRIERS IN MULTIPLE-QUANTUM-WELL STRUCTURES, Applied physics letters, 65(25), 1994, pp. 3242-3244
INVERSE PARABOLIC QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY USINGDIGITAL AND ANALOG TECHNIQUES
Authors: CHEN WQ WANG SM ANDERSSON TG THORDSON J
Citation: Wq. Chen et al., INVERSE PARABOLIC QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY USINGDIGITAL AND ANALOG TECHNIQUES, Physical review. B, Condensed matter, 48(19), 1993, pp. 14264-14268
INVERSE PARABOLIC QUANTUM-WELL AND ITS QUANTUM-CONFINED STARK-EFFECT
Authors: CHEN WQ WANG SM ANDERSSON TG THORDSON J
Citation: Wq. Chen et al., INVERSE PARABOLIC QUANTUM-WELL AND ITS QUANTUM-CONFINED STARK-EFFECT, Journal of applied physics, 74(10), 1993, pp. 6247-6250
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